Defect-free InP nanowires grown in [001] direction on InP (001)

Krishnamachari, Uppili; Borgström, Magnus T.; Ohlsson, Björn; Panev, N.; Samuelson, Lars; Seifert, Werner; Larsson, Magnus; Wallenberg, L. Reine

doi:10.1063/1.1784548

Cited by 178 publications

(201 citation statements)

References 12 publications

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“…Further down the nanowire, lateral growth results in a morphology characterized by four {100} side facets instead of four {110} side facets as reported before. 20 These four {100} side facets are observed at most growth conditions. While at low V/III ratios (<160), four nonparallel (110) side facets are formed, and the nanowires maintain a quasi-octagonal cross-section.…”

mentioning

confidence: 97%

“…[10][11][12][13][14][15] Although SFs have been found to contribute to many phenomena, 12,15 they could significantly affect the electronic and optical properties 13,[16][17][18][19] of nanowires. Zincblende nanowire growth in the h100i direction, which has seldom been reported for InP, 20 is of particular interest since such wires are inherently free from SFs and represents an ideal ZB single crystal. However, a systematic study of InP nanowires grown on InP (100) substrates with precise control of the position is still challenging and has not been reported yet.…”

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confidence: 99%

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Position-controlled [100] InP nanowire arrays

Wang

Plissard

Hocevar

et al. 2012

Applied Physics Letters

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mentioning

confidence: 97%

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confidence: 99%

Position-controlled [100] InP nanowire arrays

Wang

Plissard

Hocevar

et al. 2012

Applied Physics Letters

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“…19,20 However, also PL spectra from nanowires with twin stacking faults but without the blueshift have been reported. 21 A closer look at the nanowire surface ͓insets of Figs. 3͑a͒ and 3͑b͔͒ reveals no significant differences between the surface of an as-grown and a HF treated nanowire.…”

Section: Relative Intensitymentioning

confidence: 99%

Enhanced luminescence from catalyst-free grown InP nanowires

Mattila¹,

Hakkarainen²,

Lipsanen³

et al. 2007

Applied Physics Letters

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The surface effects in the optical properties of catalyst-free grown InP nanowires are investigated. Both as-grown nanowires and nanowires treated with hydrofluoric acid are studied using low- and room-temperature continuous-wave and time-resolved photoluminescence measurements and transmission electron microscopy. It is shown that the room-temperature photoluminescence intensity is increased by two orders of magnitude after the surface treatment, and that there is also a significant increase in the double-exponential photoluminescence decay time.

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“…Krishnamachari et al [30] proposed that during the formation of nanocatalyst particles, the GaAs substrate is locally dissolved in a reaction with the Au layer and that low-energy {111} facets develop within the pit. Such facets can be starting points for the epitaxial growth of the 111 -oriented NWs observed in our experiments for all substrate orientations.…”

Section: Znte-based Nanowiresmentioning

confidence: 99%

MBE Growth and Properties of ZnTe- and CdTe-Based Nanowires

Wójtowicz¹,

Janik²,

Zaleszczyk³

et al. 2008

J. Korean Phy. Soc.

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We review our results on the growth of ZnTe-and CdTe-based nanowires (NWs) and on their basic structural and optical properties. The nanowires were produced by using molecular beam epitaxy (MBE) with the use of a mechanism of catalytically-enhanced growth. The growth of ZnTe, CdTe, ZnMgTe and ZnMnTe nanowires was performed from elemental Zn, Cd, Mn, Mg and Te sources on the surfaces of (001)-, (110)-and (111)B-oriented GaAs substrates with Au nanocatalysts. The morphological and structural properties of the nanowires were assessed by using X-ray diffractometry, field-emission scanning electron microscopy, and high resolution transmission electron microscopy. Additional studies of the compositions of both the nanowires and the Au-rich nanocatalysts were performed with the use of energy dispersive X-ray spectroscopy. The optical properties of the NWs were assessed by using photoluminescence and Raman-scattering studies performed in both macro and micro modes. The studies revealed that binary and quaternary nanowires with average diameters from 30 to 70 nm and lengths from 1 to 2.6 µm were monocrystalline in their upper parts, their growth axis was 111 , and they grow along the [111] direction of the substrate, independent of the substrate orientation used. A Au-rich (with 20 % Ga) spherical nanocatalyst was always visible at the tip of a nanowire, thus indicating that a vapor-liquid-solid mechanism was responsible for the growth of the ZnTe-and the CdTe-based nanowires. The formation of homogeneous mixed crystal ZnMnTe and ZnMgTe nanowires was demonstrated by measurements of the variation of the lattice constant and by Raman experiments that revealed the expected shift and appearance of new phonon lines and a strong enhancement of the LO-phonon structures for an excitation close to the exciton energy of the NW materials. The photoluminescence from the internal Mn 2+ transition between crystal-field-split energy levels ( 4 T1 → 6 A1) was observed in the ZnMnTe nanowires.

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Defect-free InP nanowires grown in [001] direction on InP (001)

Cited by 178 publications

References 12 publications

Position-controlled [100] InP nanowire arrays

Position-controlled [100] InP nanowire arrays

Enhanced luminescence from catalyst-free grown InP nanowires

MBE Growth and Properties of ZnTe- and CdTe-Based Nanowires

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