Position-controlled [100] InP nanowire arrays

Wang, Jia; Plissard, Sébastien; Hocevar, Moïra; Vu, T.T.; Zehender, Tilman; Immink, George; Verheijen, Marcel A.; Haverkort, J.E.M.; Bakkers, Erik P. A. M.

doi:10.1063/1.3679136

Cited by 63 publications

(56 citation statements)

References 27 publications

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“…In the case of InP nanowires, different crystalline growth directions have been achieved by engineering the gold catalyst [21][22][23][24][25], or by spontaneous kinking in the case of selfcatalyzed nanowires [26]. The resulting wires in 〈100〉 directions are defect-free [23]. Other directions, such as 〈112〉 exhibit twin planes non-perpendicular to the nanowire axis [20,27].…”

Section: Introductionmentioning

confidence: 99%

Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

et al. 2016

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The need for indium droplets to initiate self-catalyzed growth of InAs nanowires has been highly debated in the last few years. Here, we report on the use of indium droplets to tune the growth direction of self-catalyzed InAs nanowires. The indium droplets are formed in situ on InAs(Sb) stems. Their position is modified to promote growth in the 〈11-2〉 or equivalent directions. We also show that indium droplets can be used for the fabrication of InSb insertions in InAsSb nanowires. Our results demonstrate that indium droplets can initiate growth of InAs nanostructures as well as provide added flexibility to nanowire growth, enabling the formation of kinks and heterostructures, and offer a new approach in the growth of defect-free crystals.S Online supplementary data available from stacks.iop.org/NANO/28/054001/mmedia

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Section: Introductionmentioning

confidence: 99%

Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

et al. 2016

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“…This is the platform in use in all the microelectronics industry, as CMOS fabrication on [110] or [111] surfaces have traditionally been hampered by their inferior gate oxide reliability. Only few groups have reported on the growth of III-V nanowires in the [001] direction [38][39][40], which has the additional advantage of suppressing the formation of extended planar defects and polytypism within the nanowires. We recently reported on a new form of III-V compound semiconductor nanostructures growing epitaxially as vertical wing-shaped membranes on [001] silicon substrates by solid source molecular-beam epitaxy (MBE) [24].…”

Section: Introductionmentioning

confidence: 99%

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

Russo-Averchi¹,

Dalmau-Mallorquí²,

Canales-Mundet³

et al. 2013

Nanotechnology

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Organized growth of high aspect-ratio nanostructures such as membranes is interesting for opto-electronic and energy harvesting applications. Recently, we reported a new form of InAs nano-membranes grown on Si substrates with enhanced light scattering properties. In this paper we study how to tune the morphology of the membranes by changing the growth conditions. We examine the role of the V/III ratio, substrate temperature, mask opening size and inter-hole distances in determining the size and shape of the structures. Our results show that the nano-membranes form by a combination of the growth mechanisms of nanowires and the Stranski-Krastanov type of quantum dots: in analogy with nanowires, the length of the membranes strongly depends on the growth temperature and the V/III ratio; the inter-hole distance of the sample determines two different growth regimes: competitive growth for small distances and an independent regime for larger distances. Conversely, and similarly to quantum dots, the width of the nano-membranes increases with the growth temperature and does not exhibit dependence on the V/III ratio. These results constitute an important step towards achieving rational design of high aspect-ratio nanostructures.

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“…Different techniques such as electron beam, nanosphere, nanoimprint or phase-shift lithography have been used for the definition of the patterns [45][46][47][48][49][50]. Only a few groups report on ordered growth of nanostructures on silicon (001) [35,51,52]. …”

Section: Introductionmentioning

confidence: 99%

“…Silicon (001) is the platform in use across the microelectronics industry, as CMOS fabrication on [110] reduction of structural defects and suppression of polytypism [35,36]. The ordered growth of III-V nanostructures has been intensively studied very recently in different material systems [26,35,[37][38][39][40][41][42][43][44]. Different techniques such as electron beam, nanosphere, nanoimprint or phase-shift lithography have been used for the definition of the patterns [45][46][47][48][49][50].…”

Section: Introductionmentioning

confidence: 99%

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Bottom-up engineering of InAs at the nanoscale: From V-shaped nanomembranes to nanowires

Russo-Averchi

Tütüncüoǧlu

Dalmau-Mallorquí

et al. 2015

Journal of Crystal Growth

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Position-controlled [100] InP nanowire arrays

Cited by 63 publications

References 27 publications

Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

Tuning growth direction of catalyst-free InAs(Sb) nanowires with indium droplets

Growth mechanisms and process window for InAs V-shaped nanoscale membranes on Si[001]

Bottom-up engineering of InAs at the nanoscale: From V-shaped nanomembranes to nanowires

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