Defect localization induced by hot carrier injection in short-channel MOSFETs: Concept, modeling and characterization

Cristoloveanu, S.; Haddara, H.; Revil, N.

doi:10.1016/0026-2714(93)90137-n

Cited by 14 publications

(4 citation statements)

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“…The degradation under dynamic stress conditions, especially for large drain voltages, is found to be more pronounced than expected. The damage due to hot carriers is caused by breaking of the Si-H bonds in the vicinity of the interface which results in interface states generation and bulk oxide charge build-up (Ancona et al, 1988;Mahapatra et al, 2000;Cristoloveanu et al, 1993), becomes pronounced at higher temperatures (Song et al, 1997;Bravaix et al, 1999;Moens et al, 2007;Enichlmair et al, 2007). The effect of HCD in nano scale devices increases at higher temperatures because of increase in carrier scattering (Lee et al, 2008;Jo et al, 2009, Amat et al, 2010.…”

Section: Hcd Simulationmentioning

confidence: 99%

Effects of hot-carrier degradation on the low frequency noise in strained-Si p-MOSFETs

Das

Dash

Maiti

2018

IJNP

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The aim of this work is to study hot carrier degradation starting from microscopic mechanisms of defect generation and its effects on noise behaviour of scaled strained-Si MOSFETs. As device dimensions decrease, hot carrier effects, which are mainly due to the presence of a high electric field inside the device, are becoming a major device/circuit design concern. Studies of hot carrier degradation in high-mobility SiGe channel MOSFETs, in which a more severe degradation is expected due to the smaller bandgap compared to Si, are highly essential. A comprehensive model for hot carrier degradation has been used in simulation to capture the physical picture behind these detrimental effects. In this work, hot carrier degradation modelling issues have been carefully analysed and a comprehensive physics-based hot carrier degradation simulation study has been taken up. Peculiarities of the defect generation kinetics as well as their impact on degradation are discussed. We present the results of our studies on the hot carrier degradation in novel high-mobility SiGe/strained-Si channel MOSFETs and its effects on the low-frequency noise. It is shown due to hot carrier degradation, the hole mobility is degraded by about 40% after stressing. A twofold degradation in drain current is also observed.

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Section: Hcd Simulationmentioning

confidence: 99%

Effects of hot-carrier degradation on the low frequency noise in strained-Si p-MOSFETs

Das

Dash

Maiti

2018

IJNP

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“…also on the carrier velocity/energy. This determines one of the main features of hot-carrier degradation: the strong localization of the damage [62][63][64]. Let us consider an n-channel MOSFET with the electron packet moving from the source to the drain.…”

Section: Characteristic Features Of Hot-carrier Degradationmentioning

confidence: 99%

Modeling of hot-carrier degradation based on thorough carrier transport treatment

Tyaginov

Wimmer²

2014

FACTA U EE

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We present and validate a physics-based model for hot-carrier degradation. The model is based on a thorough carrier transport treatment by means of an exact solution of the Boltzmann transport equation. Such important ingredients relevant for hot-carrier degradation as the competing mechanisms of bond dissociation, electron-electron scattering, the activation energy reduction due to the interaction of the dipole moment of the bond with the electric field as well as statistical fluctuations of this energy are incorporated in our approach. The model is validated in order to represent the linear drain current change in three different devices subjected to hot-carrier stress under different conditions. The main demand is that the model has to use a unique set of parameters. We analyze the importance of all the model ingredients, especially the role of electron-electron scattering. We check the idea that the channel/gate length of the device alone is not enough to judge whether electron-electron scattering is important or not and instead a combination of the device topology and stress conditions needs to be used.

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“…When electrons and holes gain sufficient energy and inject into the gate oxide by surmounting the energy barrier (ϳ3.1 eV for electrons and ϳ4 eV for holes͒ between the oxide and silicon, create interface traps locally around the drain region. 4 However, it has also been shown that device degradation can still occur even when carriers have insufficient energy to for injection into the oxide. 1,5,6 Unlike CHC stress, FN/DT and SHC stress results in a uniform distribution of interface traps along the channel.…”

Section: On the Mechanism Of Interface Trap Generation Under Nonunifomentioning

confidence: 99%

On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal–oxide–semiconductor field-effect transistors

Cheng

Leburton

Hess

et al. 2001

Applied Physics Letters

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Articles you may be interested inMechanism and lifetime prediction method for hot-carrier-induced degradation in lateral diffused metal-oxidesemiconductor transistors Appl. Phys. Lett. 92, 243501 (2008); 10.1063/1.2947588 Drive current enhancement in p -type metal-oxide-semiconductor field-effect transistors under shear uniaxial stress Appl. Phys. Lett. 85, 6188 (2004); 10.1063/1.1841452Hot-carrier-induced oxide charge trapping and interface trap creation in metal-oxide-semiconductor devices studied by hydrogen/deuterium isotope effect Approach to enhance deuterium incorporation for improved hot carrier reliability in metal-oxide-semiconductor devices Appl.

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Defect localization induced by hot carrier injection in short-channel MOSFETs: Concept, modeling and characterization

Cited by 14 publications

References 50 publications

Effects of hot-carrier degradation on the low frequency noise in strained-Si p-MOSFETs

Effects of hot-carrier degradation on the low frequency noise in strained-Si p-MOSFETs

Modeling of hot-carrier degradation based on thorough carrier transport treatment

On the mechanism of interface trap generation under nonuniform channel-hot-electron stress and uniform carrier-injection stress in metal–oxide–semiconductor field-effect transistors

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