Defect processes causing free carrier variations around dislocations in n-type doped GaAs

Paetzold, O. H.; Sonnenberg, K.; Irmer, G.

doi:10.1016/s0921-5107(96)01773-4

Cited by 9 publications

(6 citation statements)

References 8 publications

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“…Theoretical calculations confirm the experimental results [10]. Typical doping levels where Si acceptors, Si clusters and Si Ga -Ga-vacancy complexes are formed are given in [4] 15], phase contrast microscopy [15] and Micro-Raman analysis [13][14][15]. The various results show that in the case of Si doping the defect atmosphere is characterized by an increase, in the case of Te doping by a decrease of the charge carrier concentration compared to the surrounding material.…”

Section: Discussionsupporting

confidence: 71%

Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping

Künecke

Wellmann

2006

Eur. Phys. J. Appl. Phys.

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Abstract.In an earlier paper [P.J. Wellmann, A. Albrecht, U. Künecke, B. Birkmann, G. Mueller, M. Jurisch, Eur. Phys. J. Appl. Phys. 27, 357 (2004)] an optical method based on whole wafer absorption measurements was presented to determine the charge carrier concentration and its lateral distribution in n-type (Si/Te) doped GaAs. The submitted results for Si-doped GaAs gave rise to questions concerning the interpretation of absorption mappings in wafers with high dislocation densities. GaAs substrates for optoelectronic devices are strongly affected by dislocations.Therefore further studies were conducted: absorption and Hall measurements were performed on GaAs:Si wafers with high and low dislocation densities. Absorption in Si-doped GaAs is far more complex than in Te-doped GaAs. It shows a co-dependency on charge carrier concentration and dislocation content which causes complications in the quantitative optical determination of the charge carrier concentration. Qualitatively, absorption mappings depict dislocations and variations of charge carrier concentration very well. PACS

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Section: Discussionsupporting

confidence: 71%

Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping

Künecke

Wellmann

2006

Eur. Phys. J. Appl. Phys.

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“…Combining all these observations it can be concluded that only the kick-out mechanism under equilibrium conditions fulfills all requirements for the observed features of As/P and As/Sb interdiffusion as well as for arsenic selfdiffusion. In the literature there are also some new indications 19,20 that arsenic interstitials are governing diffusion on the arsenic sublattice. As mentioned above, this assumption contradicts the conclusion drawn from the arsenic pressure dependence of arsenic self diffusion experiments by Palfrey et al 6 Based on our results, we conclude that it cannot be excluded that the arsenic pressure dependence reported by Palfrey et al may be incorrect.…”

Section: B Diffusion Mechanism For the Out-diffusion Casementioning

confidence: 99%

Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide

Schultz

Egger

Scholz

et al. 1998

Journal of Applied Physics

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Interdiffusion experiments with GaAsP/GaAs and GaAsSb/GaAs superlattice samples were performed at various temperatures and arsenic vapor pressures. From the depth-concentration profiles effective diffusion coefficients were calculated. The dependence of these effective diffusion coefficients on the ambient arsenic pressure led to the conclusion that the interdiffusion process is governed by a substitutional-interstitial diffusion mechanism. The good agreement of the effective diffusion coefficients of the GaAsP/GaAs and GaAsSb/GaAs samples with each other and the agreement with arsenic self-diffusion data from the literature is an indication that phosphorus and antimony have good tracer properties to investigate arsenic self diffusion. Comparing our results with sulfur in-diffusion experiments from the literature we conclude that the kick-out mechanism governs self-diffusion on the arsenic sublattice in GaAs. Our results are in contradiction to arsenic self-diffusion experiments which indicated a vacancy mechanism.

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“…Although extensive investigations based mainly on experimental observations have been performed on this area, there are still some issues that need clarifying further. For example, the reduction of the concentration of Si − As (Te + As ) acting as acceptors (donors) was recently suggested as explaining the significant increase (decrease) of the free electron concentration (FEC) from the matrix to the dislocations in n-type GaAs:Si (Te) [1]. However, the explanation is suspect, especially for n-type GaAs:Si, since the Si − As concentration in n-type GaAs:Si is much lower compared to the Si + Ga concentration, so the reduction of the Si − As concentration cannot drastically change the spatial distribution of the FEC.…”

Section: Introductionmentioning

confidence: 99%

“…However, the effects of dislocations on the complexes have hardly been explored. In particular, although arsenic precipitates were observed to be commonly formed at the dislocations in GaAs doped with Cr, O, Si and Zn [1,3], it is still unknown to what extent they can influence the spatial distribution of point defects and of the FEC.…”

Section: Introductionmentioning

confidence: 99%

Interactions of point defects with dislocations in n-type silicon-doped GaAs

Lei

Leipner

Engler

et al. 2002

J. Phys.: Condens. Matter

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Raman scattering and cathodoluminescence experiments have been performed to investigate the effect of dislocations on the spatial distribution of point defects and on the free electron concentration in n-type GaAs:Si. An experimentally extended increase of the free electron and (SiGaVGa)2− complex concentrations from the matrix to the dislocation is explained as resulting from the formation of arsenic precipitates around the dislocation by means of computer simulations based on a diffusion–aggregation model.

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Defect processes causing free carrier variations around dislocations in n-type doped GaAs

Cited by 9 publications

References 8 publications

Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping

Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping

Experimental and computer simulation studies of diffusion mechanisms on the arsenic sublattice of gallium arsenide

Interactions of point defects with dislocations in n-type silicon-doped GaAs

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