Defect Reduction in GaAs/Si Films with the a-Si Buffer Layer Grown by Metalorganic Chemical Vapor Deposition

Wang, Jun; Hu, Haiyang; He, Yunrui; Deng, Chunyan; Wang, Qi; Duan, Xiaofeng; Huang, Yongqing; Ren, Xiaomin

doi:10.1088/0256-307x/32/8/088101

Cited by 6 publications

(3 citation statements)

References 25 publications

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“…In the past 40 years, various methods have been proposed for TD bending, such as thermal cyclic annealing, patterning substrates, and using strained-layer superlattices (SLS) and QDs. [8][9][10][11][12][13][14] Compared with SLS, QDs have strong stress field as three-dimensional stress structures. A very strong Peach-Koehlor force will bend the dislocation energetically when a TD propagates close to a QD.…”

Section: Introductionmentioning

confidence: 99%

Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots*

Wu¹,

Wang²,

Chen³

et al. 2021

Chinese Phys. B

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The threading dislocations (TDs) in GaAs/Si epitaxial layers due to the lattice mismatch seriously degrade the performance of the lasers grown on silicon. The insertion of InAs quantum dots (QDs) acting as dislocation filters is a pretty good alternative to solving this problem. In this paper, a finite element method (FEM) is proposed to calculate the critical condition for InAs/GaAs QDs bending TDs into interfacial misfit dislocations (MDs). Making a comparison of elastic strain energy between the two isolated systems, a reasonable result is obtained. The effect of the cap layer thickness and the base width of QDs on TD bending are studied, and the results show that the bending area ratio of single QD (the bending area divided by the area of the QD base) is evidently affected by the two factors. Moreover, we present a method to evaluate the bending capability of single-layer QDs and multi-layer QDs. For the QD with 24-nm base width and 5-nm cap layer thickness, taking the QD density of 1011 cm−2 into account, the bending area ratio of single-layer QDs (the area of bending TD divided by the area of QD layer) is about 38.71%. With inserting five-layer InAs QDs, the TD density decreases by 91.35%. The results offer the guidelines for designing the QD dislocation filters and provide an important step towards realizing the photonic integration circuits on silicon.

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Section: Introductionmentioning

confidence: 99%

Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots*

Wu¹,

Wang²,

Chen³

et al. 2021

Chinese Phys. B

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“…The lasers have a low threshold of 1.6 mW at 4.5 K under continuouswave optical pumping. In addition, amorphous Si buffer layer, strain-compensated InGaAsP superlattices, exact-oriented GaP/Si (0 0 1) substrates, and selective area growth (SAG) are also used to reduce dislocations [9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Design of a 1.55 µm nanoscale laser array on v-groove patterned Si substrates

Cheng¹,

Wang²,

Hu³

et al. 2018

Laser Phys. Lett.

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A 1.55 µm nanoscale laser array is proposed and designed on v-groove patterned Si (0 0 1) substrates. The laser array is designed by taking full advantage of the periodic groove structures of the patterned substrates. The periodic groove structures separated by a SiO2 mask can effectively reduce threading dislocation density in the active region and provide a strong lateral optical confinement for the laser array structure. The optical mode distributions of the single laser are investigated in detail, and the optical confinement factor is calculated to optimize the structure parameters of the laser array. An optimal value of 9.3% for the optical confinement factor is obtained. The analysis of threshold conditions shows that the laser array can achieve lasing with a cavity length of about 1 mm for an internal loss of 40 cm−1.

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“…[4−6] Two-dimensional materials can be fabricated by several methods, for instance, mechanical exfoliation, surface growth, [7] solution-phase growth, and vapor growth. [8,9] Lots of discoveries of intriguing physical properties of 2D materials have been made in optics, [10] mechanics, [11] thermology, [12] topology, [13] magnetics [14,15] and electronics. [16] Diverse properties further lead to enormous applications.…”

mentioning

confidence: 99%

Experimental Synthesis of Strained Monolayer Silver Arsenide on Ag(111) Substrates*

Zhang

Song

et al. 2020

Chinese Phys. Lett.

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Two-dimensional (2D) materials are playing more and more important roles in both basic sciences and industrial applications. For 2D materials, strain could tune the properties and enlarge applications. Since the growth of 2D materials on substrates is often accompanied by strain, the interaction between 2D materials and substrates is worthy of careful attention. Here we demonstrate the fabrication of strained monolayer silver arsenide (AgAs) on Ag(111) by molecular beam epitaxy, which shows one-dimensional stripe structures arising from uniaxial strain. The atomic geometric structure and electronic band structure are investigated by low energy electron diffraction, scanning tunneling microscopy, x-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy and first-principle calculations. Monolayer AgAs synthesized on Ag(111) provides a platform to study the physical properties of strained 2D materials.

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Defect Reduction in GaAs/Si Films with the a-Si Buffer Layer Grown by Metalorganic Chemical Vapor Deposition

Cited by 6 publications

References 25 publications

Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots*

Numerical investigation on threading dislocation bending with InAs/GaAs quantum dots*

Design of a 1.55 µm nanoscale laser array on v-groove patterned Si substrates

Experimental Synthesis of Strained Monolayer Silver Arsenide on Ag(111) Substrates*

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