Defect-selective etching of scandium nitride crystals

Defect-Selective Etching of Icosahedral Boron Arsenide (B12As2) Crystals in Molten Potassium Hydroxide

“…No additional etching was expected because the first experiment tentatively established reaction-limited kinetics. Making time and temperature independent confirmed the observations from the first two trials; reaction-limited kinetics [5,[9][10][11][12][13][14][15][16][17][18]. Combining the results from the 3 experiments, the optimum etching temperature and time was narrowed to 550°C for 2 minutes.…”

“…However, the oval shapes that appeared on side four still need to be examined for facet orientation. Based on previous work with defect-selective etching on other materials and the XRT results, the B 12 As 2 etch pits correspond to edge dislocations [5,[9][10][11][12][13][14][15][16][17][18]. The unique shapes, observed while etching the multi-faceted crystals, are indicative of the specific orientation of the crystals, as confirmed by XRT.…”

“…For many other materials (AlN, SiC, GaN, B 4 C) the association of etch pits with dislocations was confirmed by transmission electron microscopy (TEM) and x-ray topography (XRT) [9][10][11][12][13][14][15][16][17][18]. Determining whether trends exist in etch-pit shape and density as a function of facet orientation would be a significant step towards growing high quality (<10 8 cm -2 ) and low impurity (<10 19 cm -3 ) homoepitaxal layers of B 12 As 2 .…”

The effect of oxygen incorporation in sputtered scandium nitride films

“…It has a direct band gap, which has been measured to be between 2.1 eV [2] and 3.2 eV [3] (though it has also been predicted to display an additional, smaller indirect band gap [4]) and can be considered as an addition to the III-V group of semiconductors. As the (111) plane of ScN is lattice-matched to the (0001) plane of gallium nitride [5], it has potential for use as part of a GaN-based optoelectronic device [6], a lattice-matched contact material to GaN [7] or as a substrate for GaN growth [8,9]. It has also proven useful as an interlayer material for dislocation reduction in GaN films [10,11].…”

Growth of epitaxial thin films of scandium nitride on 100-oriented silicon

“…As 111-oriented ScN is lattice-matched to both 0001-oriented hexagonal gallium nitride and 111-oriented cubic gallium nitride [4], it could be used as part of an optoelectronic device based on either material [5]. It has also found use as an interlayer material for dislocation reduction in hexagonal GaN films [6], as a lattice-matched contact material to hexagonal GaN [7] and as a substrate for GaN growth [8,9]. It has already been grown on 111-oriented Si [10] and shown to be of use as a buffer layer for the growth of hexagonal GaN on 111-oriented Si [11].…”