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The commercial availability of high quality 150 mm 4H SiC wafers has aided in the growth of SiC power device fabrication. The progress of 150 mm 4H SiC wafer development at Dow Corning is reviewed. Defect densities compare well to those typical for 100 mm wafers, with even lower threading screw dislocation densities observed in 150 mm wafers. Resistivity data shows a comparable range from 0.012 – 0.025 ohm.cm, and excellent shape control is highlighted for wafer thicknesses of 350 μm and 500 μm.

In situ high pressure synchrotron X-ray diffraction measurements were performed on icosahedral boron phosphide (B 12 P 2) to 43.2 GPa. No structural phase transition occurs over this pressure range. The bulk modulus of B 12 P 2 is with pressure derivative of. The structure is most compressible along the chain formed by phosphorus and boron atoms in the crystal structure. It is believed that the compressibility of boron-rich compounds at close to ambient pressure is determined by the boron icosahedral structure, while the inclusive atoms (both boron and non-boron) between the icosahedra determine the high-pressure compressibility and structure stability.