Defects engineering and enhancement in optical and structural properties of 2D-MoS2 thin films by high energy ion beam irradiation

Recent progresses on ion beam irradiation induced structure and performance modulation of two-dimensional materials

“…Interestingly, the lifetimes of the trions and excitons in the irradiated MoS 2 exceeded that of the original structure and the photoluminescence spectra of the irradiated structure presented good stability, which is important for novel optoelectronic applications. Recently, Gupta et al 201 demonstrated an increase in the optical band gap in MoS 2 films under 100 MeV Si 9+ SHI irradiation at a dosage of 1 × 10 13 cm −2 (Fig. 9).…”

Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications

“…147,148 Under the irradiation of a highenergy ion beam, a large amount of chalcogen vacancies can emerge when the transformation of the stacking arrangement occurs. 149 However, heavy ion beams, including gallium, iron, silver and gold ions, can result in the ejection of both the chalcogen and transition metal atoms due to the giant momentum of the incident ions. [150][151][152] In particular, aimed at the transformation of chemical components, ion beam irradiation can effectively introduce atomic dopants in the host TMDs, especially for those that are difficult to achieve by general synthesis strategies, such as chlorine doping.…”

Wafer-scale controlled growth of MoS2 by magnetron sputtering: from in-plane to inter-connected vertically-aligned flakes

“…Two-dimensional (2D) MoS 2 has sparked great attention of the research community due to its excellent electrical, optical, and catalytic properties in contrast to its bulk counterpart [1][2][3][4]. Single layer MoS 2 has a direct bandgap of ∼1.8 eV making it scientifically and industrially important in electronics [5,6] and optoelectronics [7,8], water disinfection using visible light [9], etc.…”