Defects in semi-insulating GaAs as indicated by small-angle laser beam scattering

Калинушкин, В. П.; Murin, D. I.; Omeljanovsky, E.M.; Polyakov, A J; Prohorov, A M; Raihstein, V I

doi:10.1088/0268-1242/2/6/010

Cited by 5 publications

(1 citation statement)

References 3 publications

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“…Since that time, a number of works have been carried out in which LSDAs have been observed in such crystals as Si, 3-5 Ge, 6 GaAs, [7][8][9] and InP 10-12 by means of LALS with angular resolution. Some new opportunities of LALS have been demonstrated and new methods have been developed on its basis.…”

Section: Introductionmentioning

confidence: 99%

Elastic mid-infrared light scattering: A basis for microscopy of large-scale electrically active defects in semiconducting materials

Калинушкин

Yuryev

Astafiev

1999

Review of Scientific Instruments

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A method of the mid-IR-laser microscopy has been recently proposed for the investigation of the large-scale electrically and recombination active defects in semiconductors and non-destructive inspection of semiconductor materials and structures in the industries of microelectronics and photovoltaics. The basis for this development was laid with a wide cycle of the investigations on the low-angle mid-IR-light scattering in semiconductors. The essence of the technical idea was to apply the dark-field method for spatial filtering of the scattered light in the scanning mid-IR-laser microscope. This approach enabled the visualization of large-scale electrically active defects which are the regions enriched with ionized electrically active centers. The photoexcitation of excess carriers within a small volume located in the probe mid-IR-laser beam enabled the visualization of the large-scale recombination-active defects like those revealed in the optical or electron beam induced current methods. Both these methods of the scanning mid-IR-laser microscopy are now introduced in detail in the present paper as well as a summary of techniques used in the standard method of the lowangle mid-IR-light scattering itself. Besides the techniques for direct observations, methods for analyses of the defect composition associated with the mid-IR-laser microscopy are also discussed in the paper.Special attention is paid upon potential applications of the above methods as characterization and testing techniques in the semiconductor science and industry. It is concluded that elastic mid-infrared laser light scattering is a basis for the development of a variety of research techniques and instruments which could be useful in different branches of basic and applied research work in the field of defect engineered semiconductors as well as for the development of devices for quality inspections in the semiconductor industry. Being contactless, non-destructive and non-polluting, techniques based on mid-infrared light scattering could also find many applications for automation of the technological process control as well as the process remote monitoring.

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Section: Introductionmentioning

confidence: 99%

Elastic mid-infrared light scattering: A basis for microscopy of large-scale electrically active defects in semiconducting materials

Калинушкин

Yuryev

Astafiev

1999

Review of Scientific Instruments

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New investigation of III–V compounds by the low-angle mid-IR lightscattering technique

Yuryev

Калинушкин

1995

Materials Science and Engineering: B

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Interaction of deep levels and potential fluctuations in scattering and recombination phenomena in semi-insulating GaAs

Kažukauskas

Storasta

Vaitkus

1996

Journal of Applied Physics

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The complex influence of recombination centers and potential fluctuations of the band gap on the scattering and recombination phenomena in n-type semiinsulating liquid- encapsulated-Czochralski-grown GaAs were investigated by using the transient photoconductivity and photo-Hall effects. The inhomogeneities cause a hyperbolic decrease of nonequilibrium carrier concentration and the saturation of Hall mobility, while the exponential parts of the decay appear due to the recharge of deep levels. The mean recombination barrier heights of potential fluctuations were evaluated. We propose a complex ‘‘island’’ model of scattering and recombination centers, consisting of defect clusters and their associations around dislocations, surrounded by potential barriers. At low light intensities and at the temperatures below 330 K they are insulating for majority charge carriers, thus reducing an effective crystal volume and causing percolation transport effects. At the temperature higher than 330–360 K the main barrier of the island can be recharged or screened by nonequilibrium carriers and its fine barrier structure appears as an effective scatterer, causing a sharp decrease of the nonequilibrium Hall mobility. It was demonstrated that although doping with Sb reduce dislocation density, it can intensify the effect of smaller defects on transport phenomena.

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Defects in semi-insulating GaAs as indicated by small-angle laser beam scattering

Cited by 5 publications

References 3 publications

Elastic mid-infrared light scattering: A basis for microscopy of large-scale electrically active defects in semiconducting materials

Elastic mid-infrared light scattering: A basis for microscopy of large-scale electrically active defects in semiconducting materials

New investigation of III–V compounds by the low-angle mid-IR lightscattering technique

Interaction of deep levels and potential fluctuations in scattering and recombination phenomena in semi-insulating GaAs

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