Degradation and recovery of In/sub 0.53/Ga/sub 0.47/As photodiodes by 1-MeV fast neutrons

Results are presented for the first time of a study on the degradation of the electrical performance of MOSFET's processed on SIMOX substrates and subjected to a 220-MeV carbon irradiation. For the n-MOSFETs an unstable increase of the drain current in linear operation is found, while for the p-MOSFETs, a drastic reduction is observed, both in linear operation and in saturation. The radiation damage is also compared to the results for 1-MeV electrons, 1-MeV fast neutrons and 20-MeV alpha rays. The differences in the damage coefficients are explained by the differences in the number of knock-on atoms and the nonionizing energy loss (NIEL). The recovery behavior of the device performance by isochronal annealing is also reported.

show abstract

“…The maximum energy for knock on atoms Epmax.p and the average energy of primary knock-on atoms <Epp> are given by the next two equations [4],…”

Section: Resultsmentioning

confidence: 99%

Radiation Source Dependence of Degradation in Mosfets on SIMOX Substrate

et al. 1997

Self Cite

View full text Add to dashboard Cite

show abstract

“…The Arrhenius plots were linear, and the activation energy for each peak was determined. 27,28) Table I lists the peak temperatures, activation energies, and trap densities for each peak. The measured DLTS signal can be converted into trap density (N t ) according to the following equation:…”

Section: Dlts Signal Of the Mg 2 Si Diodesmentioning

confidence: 99%

Study of deep levels in the Mg₂Si grown by vertical Bridgeman method

Fukushima

Mizunuma

Uematsu

et al. 2022

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

The electrical characteristics of a Mg2Si p-n junction diode was investigated. The n-Mg2Si substrate was grown by using the vertical Bridgeman method. A p-n junction was fabricated by the thermal diffusion of Ag as an acceptor. The reverse current of the Au/Ag electrode diode was larger than that of the Ag electrode diode. The trap levels in the n-Mg2Si bulk crystal were investigated using deep-level transient spectroscopy. The magnitude of DLTS signal of E1 with the Au/Ag electrode diode was larger than that for the signals at the other trap levels. The E1 level corresponds to an Au-related trap that diffuses via thermal annealing during the alloying process. The open-circuit-voltage-decay study suggests the existence of a minority-carrier trap in n-Mg2Si. The minority-carrier lifetime was shorter for Au/Ag electrode diodes. Therefore, Au may be involved in the formation of minority-carrier traps, as well as in the formation of majority-carrier traps.

show abstract

“…This is due to the difference in mass of the involved atoms in both photodiodes. [6] Solid State Phenomena Vols. 95-96 383…”

Section: Measurementsmentioning

confidence: 99%

High Temperature Electron Irradiation Effects in InGaAs Photodiodes

Ohyama

Takakura

Hayama

et al. 2003

SSP

Self Cite

View full text Add to dashboard Cite

Results are presented of a detailed study of the effects of high-temperature 2-MeV electron irradiation on the performance degradation of InGaAs photodiodes. The macroscopic device performance will be correlated with the radiation-induced defects, observed by DLTS. It was found that the dark current increases after irradiation, while the photo current decreases. After irradiation, one majority electron capture level with (E c -0.37 eV) was induced in the n-InGaAs layer, while no minority hole traps were found. Additionally, the degradation of the device performance and the introduction rate of the lattice defects decrease with increasing irradiation temperature. For a 300 o C irradiation, the reduction of the photo current is only 40% of the starting value. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperatures.

show abstract

Degradation and recovery of In/sub 0.53/Ga/sub 0.47/As photodiodes by 1-MeV fast neutrons

Cited by 21 publications

References 18 publications

Radiation Source Dependence of Degradation in Mosfets on SIMOX Substrate

Radiation Source Dependence of Degradation in Mosfets on SIMOX Substrate

Study of deep levels in the Mg₂Si grown by vertical Bridgeman method

High Temperature Electron Irradiation Effects in InGaAs Photodiodes

Contact Info

Product

Resources

About

Degradation and recovery of In/sub 0.53/Ga/sub 0.47/As photodiodes by 1-MeV fast neutrons

Cited by 21 publications

References 18 publications

Radiation Source Dependence of Degradation in Mosfets on SIMOX Substrate

Radiation Source Dependence of Degradation in Mosfets on SIMOX Substrate

Study of deep levels in the Mg2Si grown by vertical Bridgeman method

High Temperature Electron Irradiation Effects in InGaAs Photodiodes

Contact Info

Product

Resources

About

Study of deep levels in the Mg₂Si grown by vertical Bridgeman method