Degradation in polysilicon thin film transistors related to the quality of the polysilicon material

Toutah, H.; Tala-Ighil, Boubekeur; Llibre, Jean-François; Boudart, B.; Mohammed-Brahim, T.; Bonnaud, Olivier

doi:10.1016/s0026-2714(03)00271-3

Cited by 2 publications

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“…The several variations of the SLS technique allow the manufacturing of polysilicon films with excellent intragrain quality and grains of different geometry. The performance and reliability of the devices fabricated on SLS polysilicon depend on this specific microstructure of the polysilicon film [7].…”

Section: Introductionmentioning

confidence: 99%

Performance and reliability of SLS ELA polysilicon TFTs fabricated with novel crystallization techniques

Moschou

Exarchos

Kouvatsos

et al. 2007

Microelectronics Reliability

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Section: Introductionmentioning

confidence: 99%

Performance and reliability of SLS ELA polysilicon TFTs fabricated with novel crystallization techniques

Moschou

Exarchos

Kouvatsos

et al. 2007

Microelectronics Reliability

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mentioning

confidence: 99%

The effect of crystallization technology and gate insulator deposition method on the performance and reliability of polysilicon TFTs

Moschou¹,

Kontogiannopoulos²,

Kouvatsos³

et al. 2008

Phys. Status Solidi (c)

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A promising, general strategy for improving performance of optoelectronic devices based on conjugated polymer semiconductors is to make better use of the fast intrachain transport along the covalently bonded polymer backbone. Little is known, however, about how the recombination rate between electrons and holes would be affected in device structures in which current flow is primarily along the polymer chain. Here a light‐emitting field effect transistor (LFET) structure with a uniaxially aligned semiconducting polymer is used to show that the width and shape of the recombination zone depend strongly on polymer alignment. For alignment of the polymer parallel to the current the emission zone is 5–10 times wider than for perpendicular alignment. 2D drift‐diffusion modeling is used to show that such significant widening of the recombination zone in the case of parallel alignment implies that the recombination rate constant is more than 100 times lower than expected for standard Langevin recombination. On the basis of Monte Carlo modeling it is proposed that such unexpected weak recombination is a result of the significant mobility anisotropy of the aligned polymer. These results provide new fundamental insight into the recombination physics of polymer semiconductors.

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Degradation in polysilicon thin film transistors related to the quality of the polysilicon material

Cited by 2 publications

References 0 publications

Performance and reliability of SLS ELA polysilicon TFTs fabricated with novel crystallization techniques

Performance and reliability of SLS ELA polysilicon TFTs fabricated with novel crystallization techniques

The effect of crystallization technology and gate insulator deposition method on the performance and reliability of polysilicon TFTs

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