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Magnetic quantum periodicity in the dc voltage is observed when asymmetric rings are switched between superconducting and normal state by a noise or ac current. This quantum effect is used for detection of a non-equilibrium noise with the help of a system of 667 asymmetric aluminum rings of 1 µm in diameter connected in series. Any noise down to the equilibrium one can be detected with the help of such system with enough great number of asymmetric rings.

The letter presents the investigation of the temperature dependence of the charging mechanism of dielectric layer in radio frequency microelectromechanical system switch. The accumulated charge kinetics are monitored through the transient response of device capacitance when a bias greater than pull-in is applied. The capacitance transient response is shown to follow a stretched exponential law. The “time scale” of the stretched exponential process is found to be thermally activated, with an activation energy that is determined from Arrhenius plot.

We have investigated the overshoot effect of switch-on transients of polycrystalline silicon thin-film transistors. The investigation has been performed with devices fabricated on laterally grown polycrystalline silicon films having very long crystal domains. These films were crystallized by excimer-laser annealing and had a thickness in the range of 30–100 nm. The measurement of the switch-on transients reveals that the device transient behavior depends significantly on both temperature and illumination conditions. The temperature dependence, under dark state or under illumination, suggests that the mechanism accountable for the transient behavior of thin-film transistors cannot be attributed only to carrier trapping, but rather to a more complex mechanism involving carrier generation and recombination in the device body. This allows the estimation of the dependence of generation lifetime on the polycrystalline film thickness.