Temperature study of the dielectric polarization effects of capacitive RF MEMS switches

Papaioannou, G.; Exarchos, M.; Theonas, V.; Wang, Guoan; Papapolymerou, John

doi:10.1109/tmtt.2005.857336

Cited by 110 publications

(83 citation statements)

References 15 publications

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“…This number is only slightly larger than the experimental value of 0.72±0.13 eV 53 indicating good relaxation; by comparison, prior DFT-based predictions predict an amorphization energy of 2.8 eV per formula unit with respect to β-Si 3 N 4 . 30,31 The crystalline structures generated from 3.1 g/cm 3 annealing are energetically very similar to α-Si 3 N 4 crystalline polymorph and also exhibit similar ring statistics, Fig. 2(d), and RDF, see supplementary material.…”

Section: Distribution Of Cohesive Energy Density and Bulk Modulusmentioning

confidence: 81%

“…In summary, the structural analysis shows that annealing at constant densities of 2.7 g/cm 3 , 2.9 g/cm 3 , and 3.1 g/cm 3 generate an ensemble of porous-free amorphous structures relevant for applications where highquality dielectrics are needed. Annealing at lower or higher densities does not result in additional structures with desired characteristics.…”

Section: A Structure Characterization and Classificationmentioning

confidence: 96%

“…The percentage of non-periodic provides great insight into the character of our structures, as can be seen from the histogram in Fig. 1 for the ensemble of structures obtained from 3.1 g/cm 3 annealing. Clearly, two groups of structures can be identified: crystalline structures with a percentage of non-periodic vectors close to zero and disordered ones with the large percentage of nonperiodic vectors.…”

Section: A Structure Characterization and Classificationmentioning

confidence: 97%

“…Since the experimental RDF data of stoichiometric a-Si 3 N 4 is available only for densities 2.6 g/cm 3 and 2.87 g/cm 3 , the RDF is compared to the nearest experimental density. The ensemble averaged partial RDFs for anneal density are presented in the supplementary material.…”

Section: B Radial Distribution Functionsmentioning

confidence: 99%

“…1 In addition to their use in silicon-oxide-nitride-oxide-silicon (SONOS) structures for non-volatile memory applications, 2 they are also widely used as a dielectric in radio frequency Microelectromechanical system (RF-MEMS) switches, [3][4][5] anti-reflective coating in silicon solar cells, 6,7 passivation layer to form alkali-ion diffusion barrier 7 and dielectric insulator film for thin film transistors (TFT). 8 The amorphous SiN x matrix is highly constrained due to its high overall coordination number and, hence, exhibits a high concentration of defects as compared to other amorphous dielectrics such as a-SiO 2 .…”

Section: Introductionmentioning

confidence: 99%

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Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study

2012

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ABSTRACT:We present a first principles study of the effect of atomic variability on the structure, mechanical and electronic properties of amorphous silicon nitride. Using a combination of molecular dynamics and density functional theory calculations we predict an ensemble of statistically independent, well-relaxed and stress-free amorphous silicon nitride structures. We analyze the short, intermediate, and long-range order of the structures generated using radial distribution functions, ring statistics, bond angle distributions, and translational invariance parameters. Though energetically very similar, these structures span a wide range of densities (2.75-3.25 g/cm 3 ) and bulk moduli (115GPa to 220 GPa) in good agreement with the fabrication-dependent experimental range. Chemical bonds and atomic defects are identified via a combination of bond distance cutoff and maximally localized Wannier function analysis. A significant number of the amorphous structures generated (~30%) are defect-free providing an ideal reference to characterize the formation energy of the various point defects and their defect energy levels. An analysis of the Kohn-Sham density of states and energetics of the structures reveals that defects in amorphous dielectrics have a distribution of associated properties (e.g. formation energies and electronic energy levels) due to variations in local atomic structure; this should be taken into consideration in physics-based continuum models of these materials.

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Section: Distribution Of Cohesive Energy Density and Bulk Modulusmentioning

confidence: 81%

Section: A Structure Characterization and Classificationmentioning

confidence: 96%

Section: A Structure Characterization and Classificationmentioning

confidence: 97%

Section: B Radial Distribution Functionsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study

2012

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Dielectric charging effect estimation to M.I.M. structured RF MEMS devices due to 1 MeV γ‐ray photons irradiation

Theonas¹,

Papaioannou²,

Konstantinidis

et al. 2008

Phys. Status Solidi (c)

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Knowledge of nucleation and growth mechanisms is an important prerequisite for size control during nanoparticle synthesis. However, for many systems the mechanism is not completely understood. Here, investigation of the formation of NixPt1–x nanoparticles that are synthesized via reduction of platinum (II) acetylacetonate and nickel (II) acetate in the presence of oleic acid, oleylamine, and 1,2‐hexadecanediol as the reducing agent is reported. Different reaction conditions are studied to reveal the influence on particle size and composition. The composition of the NixPt1–x nanocrystals is tunable through variation of the Ni:Pt ratio. The particle size depends on the concentration of oleic acid, while oleylamine mainly determines the particle shape. The binding of both stabilizing agents on the nanoparticle surface is investigated by attenuated total reflectance Fourier transform infrared spectroscopy. The growth process of the particles is studied by transmission electron microscopy analysis and UV‐vis spectroscopy at different reaction stages. Our results lead to the assumption of a single nucleation event, followed by the growth process in the absence of Ostwald ripening. This type of growth can be extended by continuous injection of the molecular precursors, which allows the possibility of particle size control.

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The Impact of Dielectric Material and Temperature on Dielectric Charging in RF MEMS Capacitive Switches

Papaioannou

2010

NATO Science for Peace and Security Series B: Physics and Biophysics

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Temperature study of the dielectric polarization effects of capacitive RF MEMS switches

Cited by 110 publications

References 15 publications

Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study

Effect of topological disorder on structural, mechanical, and electronic properties of amorphous silicon nitride: An atomistic study

Dielectric charging effect estimation to M.I.M. structured RF MEMS devices due to 1 MeV γ‐ray photons irradiation

The Impact of Dielectric Material and Temperature on Dielectric Charging in RF MEMS Capacitive Switches

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