Degradation of 4H-SiC IGBT threshold characteristics due to SiC/SiO2 interface defects

Pesic, I.; Navarro, D.; Miyake, M.; Miura-Mattausch, Mitiko

doi:10.1016/j.sse.2014.06.023

Cited by 16 publications

(7 citation statements)

References 20 publications

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“…1a. The resulting I c -V c simulated with the measured trap density is shown in Fig.1b [3]. The switching characteristics at high-frequency has also been reported [4].…”

Section: Introductionmentioning

confidence: 53%

Investigation of 4H-SiC IGBT Turn-off Performance for Achieving Low Power Loss

Navarro¹,

Pesic²,

Morikawa³

et al. 2015

Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials

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The dynamic operation of a 4H-SiC IGBT turn-off performance is investigated using reported measurements of the interface defect density and device simulation. During the off-state of a repetitive pulse switching, trapped carriers influence the channel potential towards the collector side that creates a path for current flow. The current is observed as an additional tail current that contributes to power dissipation The capture cross-section parameter used in the simulation depicts the probability of traps capturing carriers. Lower parameter value entails longer time for carrier trap/detrap process, and vice-versa. Future scaled SiC-based devices need to achieve an excellent SiC/SiO 2 interface to achieve low off-state current and thereby, low power loss.

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“…1a. The resulting I c -V c simulated with the measured trap density is shown in Fig.1b [3]. The switching characteristics at high-frequency has also been reported [4].…”

Section: Introductionmentioning

confidence: 53%

Investigation of 4H-SiC IGBT Turn-off Performance for Achieving Low Power Loss

Navarro¹,

Pesic²,

Morikawa³

et al. 2015

Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials

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“…The collector current density is plotted against the collector voltage in a gate bias range from 0 V to -30 V in steps of −5 V. The turn-on voltage of fabricated IGBT device is about −3 V, which is comparable to the built-in voltage of substance/buffer PN junction. However, the threshold voltage of fabricated p-channel IGBT is approximately −12 V, which indicates that there are a large number of fixed charges [24] in gate oxide. The simulated SiC p-IGBT on-state characteristics with a gate voltage of −30 V are also shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension*

et al. 2019

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10-kV 4H–SiC p-channel insulated gate bipolar transistors (IGBTs) are designed, fabricated, and characterized in this paper. The IGBTs have an active area of 2.25 mm2 with a die size of 3 mm × 3 mm. A step space modulated junction termination extension (SSM-JTE) structure is introduced and fabricated to improve the blocking performance of the IGBTs. The SiC p-channel IGBTs with SSM-JTE termination exhibit a leakage current of only 50 nA at −10 kV. To improve the on-state characteristics of SiC IGBTs, the hexagonal cell (H-cell) structure is designed and compared with the conventional interdigital cell (I-cell) structure. At an on-state current of 50 A/cm2, the voltage drops of I-cell IGBT and H-cell IGBT are 10.1 V and 8.3 V respectively. Meanwhile, on the assumption that the package power density is 300 W/cm2, the maximum permissible current densities of the I-cell IGBT and H-cell IGBT are determined to be 34.2 A/cm2 and 38.9 A/cm2 with forward voltage drops of 8.8 V and 7.8 V, respectively. The differential specific on-resistance of I-cell structure and H-cell structure IGBT are 72.36 m Ω · cm 2 and 56.92 m Ω · cm 2 , respectively. These results demonstrate that H-cell structure silicon carbide IGBT with SSM-JTE is a promising candidate for high power applications.

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“…1(b). 21) The switching characteristics at high frequency has also been reported. 22) The delay of formation of carriers in the channel dominates more than the carrier trapping=detrapping when the switching speed reaches the nonquasi-static (NQS) regime.…”

Section: Introductionmentioning

confidence: 95%

Investigation of 4H-SiC insulated-gate bipolar transistor turn-off performance for achieving low power loss

Navarro¹,

Pesic

Morikawa³

et al. 2016

Jpn. J. Appl. Phys.

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The dynamic characteristics of a 4H-SiC insulated-gate bipolar transistor (IGBT) at pulse switching is investigated by incorporating reported measurements of the interface defect density to device simulation. Different trap features such as energy states and trap time constants are investigated to determine the influence of traps on circuit performance. The capture cross-section parameter used in the simulation depicts the probability of traps to trap/detrap carriers which relates to the carrier trap time constant. It is demonstrated that trapped carriers from the on-state condition cause enhanced generation current during the off-state condition, which give rise to undesired leakage current in addition to the threshold voltage shift previously reported. The device power dissipation is increased by a factor of 100 due to the defects.

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Degradation of 4H-SiC IGBT threshold characteristics due to SiC/SiO2 interface defects

Cited by 16 publications

References 20 publications

Investigation of 4H-SiC IGBT Turn-off Performance for Achieving Low Power Loss

Investigation of 4H-SiC IGBT Turn-off Performance for Achieving Low Power Loss

Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension*

Investigation of 4H-SiC insulated-gate bipolar transistor turn-off performance for achieving low power loss

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