Degradation of active region in InGaAsP/InP buried heterostructure lasers

Fukuda, Mitsuo; Iwane, G.

doi:10.1063/1.336298

Cited by 47 publications

(10 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…In these stress conditions, the heter neous laser diodes exhibited a peculiar set of degradation processes, affecting both optical and electrical characteristics of the devices. In particular, the LDs under inves tion showed a gradual and stress-current dependent increase in threshold current was found to be correlated with the decrease in both turn-on voltage, as in [23], and dependent ideality factor, estimated at low forward voltages. These three processes w found to be consistent with the increase in defect concentration within the active re of the device.…”

Section: Reliability Of Heterogeneous Iii-v Lasers On Soi Substratesmentioning

confidence: 85%

A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics

et al. 2021

View full text Add to dashboard Cite

With this review paper we provide an overview of the main degradation mechanisms that limit the long-term reliability of IR semiconductor lasers for silicon photonics applications. The discussion is focused on two types of laser diodes: heterogeneous III–V lasers bonded onto silicon-on-insulator wafers, and InAs quantum-dot lasers epitaxially grown on silicon. A comprehensive analysis of the reliability-oriented literature published to date reveals that state-of-the-art heterogeneous laser sources share with conventional laser diodes their major epitaxy-related degradation processes, such as the generation of non-radiative recombination centers or dopant diffusion, while eliminating cleaved facets and exposed mirrors. The lifetime of InAs quantum dot lasers grown on silicon, whose development represents a fundamental step toward a fully epitaxial integration of future photonic integrated circuits, is strongly limited by the density of extended defects, mainly misfit dislocations, protruding into the active layer of the devices. The concentration of such defects, along with inefficient carrier injection and excessive carrier overflow rates, promote recombination-enhanced degradation mechanisms that reduce the long-term reliability of these sources. The impact of these misfits can be largely eliminated with the inclusion of blocking layers.

show abstract

Section: Reliability Of Heterogeneous Iii-v Lasers On Soi Substratesmentioning

confidence: 85%

A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics

et al. 2021

View full text Add to dashboard Cite

show abstract

“…When we use NIL for fabricating DFB LDs, we have paid attention to mechanical damage in epitaxial layers by imprint pressure, because compound semiconductor crystals used for LDs are easily damaged by mechanical stress, leading to severe deterioration in long-term reliability of device characteristics (Fukuda et al, 1985). In this study, photoluminescence (PL) method have been used for evaluation of the crystal damage, and simple 2-D simulation is conducted as qualitative analysis of distribution of the PL intensity.…”

Section: Resultsmentioning

confidence: 99%

Application of Nanoimprint Lithography to Distributed Feedback Laser Diodes

Yanagisawa¹

2011

Recent Advances in Nanofabrication Techniques and Applications

View full text Add to dashboard Cite

“…The BH laser with a cavity length of 1000 mm was subjected to ALT condition of 100°C, 500mA. The degradation of Pattern A was typically related to the regrowth interface, which was more pronounced in the BH laser (Fukuda et al, 1985;Fukuda et al, 1994).…”

Section: Degradation Pattern Amentioning

confidence: 99%

Three Cases of Gradual Degradation Mode Analysis of Semiconductor Laser Diodes

Huang¹,

Wang²,

Jan³

2021

MAS

View full text Add to dashboard Cite

Semiconductor laser diodes are important components for various applications such as 5G wireless, datacenter, passive optical network, and aerospace applications. High reliability has emerged to be the universal requirement for all optical applications. To achieve high reliability, fundamental understanding of the laser degradation behavior is crucial. In this paper, we study three cases of gradual degradataion modes of laser diodes including (1) Pattern-A that is associated with threshold current change only, (2) Pattern-B that involve both threshold current and power changes, and (3) Pattern-C that is associated with merely power change. We have instituted reliability equations for the degradation processes. The new reliability models could provide estimation on the laser end-of-life based on the degradation rate and device performance specification.

show abstract

Degradation of active region in InGaAsP/InP buried heterostructure lasers

Cited by 47 publications

References 9 publications

A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics

A Review of the Reliability of Integrated IR Laser Diodes for Silicon Photonics

Application of Nanoimprint Lithography to Distributed Feedback Laser Diodes

Three Cases of Gradual Degradation Mode Analysis of Semiconductor Laser Diodes

Contact Info

Product

Resources

About