Delay Between Current Pulse and Light Emission of a Gallium Arsenide Injection Laser

Konnerth, K.; Lanza, C.

doi:10.1063/1.1753990

Cited by 170 publications

(28 citation statements)

References 5 publications

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“…for y = 0, by integrating over time from zero to td when the threshold value of electron concentration is reached. The result is [31]: ta = "re In P ---~Ptn( ' It should be mentioned that the time delay can be longer than this value in some types of semiconductor laser above a critical temperature (see, e.g. reference [19] and references therein).…”

Section: High-frequency Modulationmentioning

confidence: 99%

“…The value of re may also be measured by a method involving the time delay of the onset of stimulated emission after the application of the current pulse [19,20,31,32]. The time delay, ta, which is just the time required to build up population inversion in the diode, is given by solving the rate Equation 1 for electrons below threshold, i.e.…”

Section: High-frequency Modulationmentioning

confidence: 99%

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Rate equations and transient phenomena in semiconductor lasers

Adams

1973

Opto-electronics

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This contribution attempts to review certain resonance effects which occur in the dynamic behaviour of semiconductor lasers. To study these effects theoretically, a rate equation approach is used for single-mode operation in the region of lasing threshold.The tWo basic rate equations are given and their transient solutions discussed. The existence of two time constants in these equations, viz. the electron lifetime % and the photon lifetime rp., gives rise to a characteristic resonance frequency in the GHz region. This resonance manifests itself in transient 'spiking' effects, in quantum noise phenomena, and in high-frequency modulation experiments. In a modified form the resonance frequency may also be studied in lasers with external cavities and in double-diode configurations (or, equivalently, conventional devices with non-uniform excitation along the cavity length).In the latter two examples mentioned above, the resonance is excited by optical feedback of the laser radiation into the active medium via a 'lossy' or insufficiently inverted region. In the 'spiking' oscillations commonly observed at the commencement of laser operation, the initial 'population overshoot' isthe cause of the resonance. For the case of quantum noise it is the requirement that the photon and electron populations have integer values which supplies the driving force-a true quantum effect. High-frequency modulation experiments directly reveal the same resonance frequency where a strong maximum in modulation intensity occurs.

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Section: High-frequency Modulationmentioning

confidence: 99%

Section: High-frequency Modulationmentioning

confidence: 99%

Rate equations and transient phenomena in semiconductor lasers

Adams

1973

Opto-electronics

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“…3. For C 0 = 0, the rela tionship is a straight line given by the usual delay-time formula 23 td -τ. In -1 j .…”

Section: Laser Turn-on Delaymentioning

confidence: 99%

Effect of Junction Capacitance on the Rise Time of LED's and on the Turn-on Delay of Injection Lasers

Lee¹

1975

Bell System Technical Journal

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The space-charge capacitance of the forward-biased junction has been found to play a major role in (i) the apparent rise time of the emission from small-area, high-radiance LED's and (ii) the apparent turn-on delay of stripe-geometry DH-structure laser diodes. For a zero-bias capacitance of 200 pF, a typical value for such devices made by oxidemasking techniques, the measured rise time of an LED that is fully turned on and the turn-on delay time of injection lasers may be as much as twice the limitation imposed by the spontaneous carrier recombination time. A proposed method to reduce these delays by preshaping the driving pulse is analyzed, and a reduction of the delay by a factor of 2 or better is predicted. These results are in agreement with experiments.

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“…A number of authors studied these parameters through carrier lifetime measurements [58,59,60,61,62]. These measurements use different approaches but all give as a result the value of the carrier lifetime.…”

Section: Electrical and Optical Measurements Of Rf Modulation Responsmentioning

confidence: 99%

Advances in Measurements of Physical Parameters of Semiconductor Lasers

Shtengel¹,

Kazarinov²,

Belenky

et al. 1998

Int. J. Hi. Spe. Ele. Syst.

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We present a summary of advances in characterization techniques allowing for comprehensive study of physical processes in semiconductor lasers. 5. Electrical and optical measurements of RF modulation response below threshold. 5.1. Determination of the differential carrier lifetime from the device impedance. 5.2. Determination of the differential carrier lifetime from the optical response measurements. 6. Optical measurements of RF modulation response and RIN above threshold 6.1. Determination of the resonant frequency and damping factor using carrier subtraction technique. Determination of the differential gain and the gain compression coefficient. 6.2. Determination of the resonant frequency and differential gain from the RIN measurements. 7. Measurements of the linewidth enhancement factor. 7.1. Measurements of linewidth enhancement factorfrom ASE and TSE spectra. 8. Measurements of the carrier temperature and carrier heating in semiconductor lasers. 8.1. Determination of carrier heating from wavelength chirp and TSE measurements. 9. References.

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Delay Between Current Pulse and Light Emission of a Gallium Arsenide Injection Laser

Abstract: Gallium arsenide laser diode emission spectra in pulsed magnetic fields of up to 26 T

Cited by 170 publications

References 5 publications

Rate equations and transient phenomena in semiconductor lasers

Rate equations and transient phenomena in semiconductor lasers

Effect of Junction Capacitance on the Rise Time of LED's and on the Turn-on Delay of Injection Lasers

Advances in Measurements of Physical Parameters of Semiconductor Lasers

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