Effect of Junction Capacitance on the Rise Time of LED's and on the Turn-on Delay of Injection Lasers

Lee, T. P.

doi:10.1002/j.1538-7305.1975.tb02825.x

Cited by 81 publications

(28 citation statements)

References 15 publications

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“…At first the depletion capacitance C depl of the LED is charged (we will neglect this initial turn-on delay in the further discussion). Afterwards the MQWs get filled with carriers and radiative recombination sets in [8]. The time when radiation starts is defined as t = 0 in the following Eq.…”

Section: A Optical Rise Timementioning

confidence: 99%

High-Speed LED Driver for ns-Pulse Switching of High-Current LEDs

Halbritter

Jäger

Weber

et al. 2014

IEEE Photon. Technol. Lett.

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This letter analyzes the intrinsic optical switching response of state-of-the-art high power, multiquantum wells, thinfilm, and surface-textured infrared light emitting diodes (LEDs). For the switching time response of such devices, the theoretical basics are presented and their predictions are experimentally verified. In the second part of this letter, a novel, fast switching LED driving circuit is presented which enables nanosecond-pulse operation. The circuit reduces significantly the optical rise and fall time of LEDs from 10/15 ns, respectively, down to 2.6 ns at 2-A pulse current without compromising the peak output power.

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Section: A Optical Rise Timementioning

confidence: 99%

High-Speed LED Driver for ns-Pulse Switching of High-Current LEDs

Halbritter

Jäger

Weber

et al. 2014

IEEE Photon. Technol. Lett.

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“…The combined pulses drive the diode as shown. Capacitance effects [26] are eliminated by delaying the small signal pulse about 100 ns with respect to the rise of the bias pulse.…”

Section: B Carrier Lifetimementioning

confidence: 99%

Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sources

Olshansky¹,

Su²,

Manning³

et al. 1984

IEEE J. Quantum Electron.

237

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A small signal method is used to measure the carrier lifetime as a function of injected carrier density, and the results are used to determine the radiative and nonradiative recombination rates for AlGaAs LED's and 1.3 pm InGaAsP lasers. For AlGaAs LED's the radiative recombination constant decreases with injected carrier density and the rate equation contains a small nonradiative Cn3 term. The low internal efficiency of 1.3 pm InGaAsP lasers is found to be primarily caused by two factors: a radiative coefficient B(n) which strongly decreases with the injected carrier density, and CHHS Auger recombination having a recombination coefficient of 1-2 X lo-'' cm6/s. A recombination term representing carrier leakage is observed in some devices, but it is not the principal cause of low internal efficiency. OLSHANSKY et al.: RADIATIVE AND NONRADIATIVE RECOMBINATION RATES 853

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“…Such a temperature is usually allowable and the 750 MHz limit on B is not further reduced. It should be noted that if the output of the laser is not required and only the input for dissipation purposes needs to be determined from the current, Lee's simple diode model 17 works as accurately as the more complex one suggested by Tucker. 4 These results also impact on the alignability FOM since the loss of power affects the power budget calculations and sets the power dissipation level.…”

Section: ͑5͒mentioning

confidence: 99%

Parameter extraction for a figure-of-merit approach for the comparison of optical interconnects

et al. 1998

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A methodology is described for parameter extraction from modeling for the determination of the appropriate figures of merit (FOMs) to be used for comparisons between different architectures of optical interconnects and their electrical counterparts. The key FOM selected for performance is that of data throughput, defined as the product of bitrate and interconnect length. Parameter extraction proceeds through modeling of a prototype optical transceiver introduced by GTE laboratories. Optical power budget modeling is performed as it applies to a simple basic optical interconnect, which can then be extended to the modeling of arrays, by incorporating channel crosstalk limitations. Through this modeling, the specific limitations to the data throughput are explored and several trade-offs such as those between gain and speed, power and delay-times, and power and bit error rate (BER) are quantified. © 1998 Society of Photo-Optical Instrumentation Engineers. [S0091-3286(98)

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Effect of Junction Capacitance on the Rise Time of LED's and on the Turn-on Delay of Injection Lasers

Cited by 81 publications

References 15 publications

High-Speed LED Driver for ns-Pulse Switching of High-Current LEDs

High-Speed LED Driver for ns-Pulse Switching of High-Current LEDs

Measurement of radiative and nonradiative recombination rates in InGaAsP and AlGaAs light sources

Parameter extraction for a figure-of-merit approach for the comparison of optical interconnects

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