Delayed photocurrent affected by Γ-<i>X</i> resonance in GaAs/AlAs type-I short-period superlattices

Mimura, Hidenori; Ohtani, Naoki; Hosoda, M.; Tominaga, Koji; Watanabe, Toshihide; Tanaka, Genichi; Fujiwara, K.

doi:10.1063/1.115224

Applied Physics Letters

1995

DOI: 10.1063/1.115224

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Delayed photocurrent affected by Γ-X resonance in GaAs/AlAs type-I short-period superlattices

Hidenori Mimura¹,

Naoki Ohtani²,

M. Hosoda³

et al.

Abstract: Observation of the type I-type II crossover in GaAs/AlAs shortperiod superlattices by optical spin orientation J. Appl. Phys. 69, 2532 (1991); 10.1063/1.348693Study of the directindirect bandgap transition in GaAs/AlAs shortperiod superlattices using photocurrent spectroscopy

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Cited by 9 publications

(1 citation statement)

References 17 publications

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“…Recently, it was demonstrated that ⌫-X transport can drastically influence the carrier transport in type-I SL's. 4,5 In weakly coupled, type-I SL's, resonant tunneling in the conduction band usually occurs between different ⌫ subbands. For small carrier densities, the electric-field distribution across the superlattice is homogeneous.…”

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confidence: 99%

Electric-field domain formation in type-II superlattices

Mimura¹,

Hosoda²,

Ohtani³

et al. 1996

Phys. Rev. B

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Static electric-field domains as well as current self-oscillations due to domain-wall oscillations have been observed in undoped, type-II GaAs-AlAs superlattices under photoexcitation. Photoluminescence measurements clearly demonstrate the coexistence of low-and high-field domains in the static and oscillating domain voltage regime. A comparison with the calculated energy level distribution indicates that the static domains are connected with negative differential velocity ͑NDV͒ due to resonant transfer between X 2 in the AlAs layer and ⌫ 1 in the GaAs layer, while the oscillating domains are attributed to NDV originating from resonant tunneling between X 1 and X 2 in the AlAs layers. This observation demonstrates the importance of transport channels due to the indirect band structure of type-II superlattices. ͓S0163-1829͑96͒51328-7͔

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confidence: 99%

Electric-field domain formation in type-II superlattices

Mimura¹,

Hosoda²,

Ohtani³

et al. 1996

Phys. Rev. B

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Γ-X hybridization effects on the carrier subband transition times in type I GaAsAlAs quantum wells

Lima

Weber

Reinecke

1997

Solid State Communications

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Carrier transport and photoluminescence affected by Γ–X resonance in GaAs–AlAs type-I superlattices

Mimura

Hosoda²,

Ohtani

et al. 1998

Physica E: Low-dimensional Systems and Nanostructures

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Delayed photocurrent affected by Γ-X resonance in GaAs/AlAs type-I short-period superlattices

Abstract: Observation of the type I-type II crossover in GaAs/AlAs shortperiod superlattices by optical spin orientation J. Appl. Phys. 69, 2532 (1991); 10.1063/1.348693Study of the directindirect bandgap transition in GaAs/AlAs shortperiod superlattices using photocurrent spectroscopy

Cited by 9 publications

References 17 publications

Electric-field domain formation in type-II superlattices

Electric-field domain formation in type-II superlattices

Γ-X hybridization effects on the carrier subband transition times in type I GaAsAlAs quantum wells

Carrier transport and photoluminescence affected by Γ–X resonance in GaAs–AlAs type-I superlattices

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