2014
DOI: 10.1038/ncomms4245
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Delocalization and dielectric screening of charge transfer states in organic photovoltaic cells

Abstract: Charge transfer (CT) states at a donor-acceptor heterojunction have a key role in the charge photogeneration process of organic solar cells, however, the mechanism by which these states dissociate efficiently into free carriers remains unclear. Here we explore the nature of these states in small molecule-fullerene bulk heterojunction photovoltaics with varying fullerene fraction and find that the CT energy scales with dielectric constant at high fullerene loading but that there is a threshold C 60 crystallite … Show more

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Cited by 229 publications
(308 citation statements)
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“…Cg can be expressed by the equation Cg= ɛɛ 0 A/L where A is the area of the device, L is the thickness of the active layer, ɛ 0 the dielectric constant of vacuum and ɛ the static permittivity of the active layer. When the temperature is increased two phenomena can influence Cg due to significant morphological modification of the active layer: i) variation of the active layer thickness (L), and ii) change in the dielectric properties of the blend (ɛ) [58]. To define the conditions at which the Cg should be monitored, we measured the capacitance-voltage characteristics in the dark for each system, from -1 V to 1,5 V at different frequencies.…”
Section: Capacitance Vs Temperature Measurementsmentioning
confidence: 99%
“…Cg can be expressed by the equation Cg= ɛɛ 0 A/L where A is the area of the device, L is the thickness of the active layer, ɛ 0 the dielectric constant of vacuum and ɛ the static permittivity of the active layer. When the temperature is increased two phenomena can influence Cg due to significant morphological modification of the active layer: i) variation of the active layer thickness (L), and ii) change in the dielectric properties of the blend (ɛ) [58]. To define the conditions at which the Cg should be monitored, we measured the capacitance-voltage characteristics in the dark for each system, from -1 V to 1,5 V at different frequencies.…”
Section: Capacitance Vs Temperature Measurementsmentioning
confidence: 99%
“…[4][5][6][7][8][9] Such complex, but more realistic, structural models are motivating studies of the correlations between film morphology and the processes of charge generation and device function in OSC. 6,8,[10][11][12][13][14][15][16][17][18][19] In this study, we address this issue for blend films and devices employing an amorphous donor polymer silaindacenodithiophene donor (SiIDT-DTBT) previously shown to exhibit high miscibility with PC60BM. 20 Our study employs a range of blend ratios to modulate the blend morphology and both rigorous structural and spectroscopic characterization allowing us to quantitatively analyse the correlations between blend structure and device performance.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5][6][7][8] With the rapidly growing interests in OPVs in both scientific and industrial communities, theoretical modeling of the electronic structure of excitons and their accompanying dynamics has been widely implemented and now plays an important role in interpreting the elementary processes or designing new materials. [5][6][7][8][9][10][11][12][13][14][15][16][17] Due to the large size of the system, the theoretical investigations are mainly based on simplified models with the common assumption that only the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) of each molecule participate in the exciton dynamics within the donor (D)/acceptor (A) heterojunction, i.e.…”
Section:  Introductionmentioning
confidence: 99%