Delta-doped back-illuminated CMOS imaging arrays: progress and prospects

Hoenk, Michael E.; Jones, Todd J.; Dickie, Matthew R.; Greer, Frank; Cunningham, Thomas J.; Blazejewski, E. R.; Nikzad, Shouleh

doi:10.1117/12.832326

Cited by 21 publications

(21 citation statements)

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“…[5][6][7] With the recent acquisition and commissioning of a production-scale silicon MBE system, JPL has greatly expanded its capabilities for producing high-performance delta-doped, back-illuminated imaging arrays with high throughput and high yield ( Figure 1). 4,8 Using this system, we demonstrated superlattice-doped CMOS imaging arrays with unprecedented stability under direct illumination with pulsed deep ultraviolet (DUV) lasers. [9][10][11] Recently we demonstrated superlattice-doped avalanche photodiodes with integrated, solar-blind metal-dielectric coatings, which show excellent promise for scientific and commercial applications.…”

Section: Challenge and Paradox: Atomic Scale Control Over Surfaces Anmentioning

confidence: 99%

“…Since JPL's invention of MBE as a tool for surface passivation of backside illuminated (BSI) imaging arrays, deltadoped detectors have demonstrated nearly 100% internal quantum efficiency (QE) with exceptional stability in backilluminated CCD, CMOS, PIN diode arrays, and hybrid devices spanning a variety of formats and designs. [1][2][3][4] Using ALD, we have further demonstrated world record QE at deep and far ultraviolet wavelengths. [5][6][7] With the recent acquisition and commissioning of a production-scale silicon MBE system, JPL has greatly expanded its capabilities for producing high-performance delta-doped, back-illuminated imaging arrays with high throughput and high yield ( Figure 1).…”

Section: Challenge and Paradox: Atomic Scale Control Over Surfaces Anmentioning

confidence: 99%

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Superlattice-doped silicon detectors: progress and prospects

et al. 2014

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In this paper we review the physics and performance of silicon detectors passivated with wafer-scale molecular beam epitaxy (MBE) and atomic layer deposition (ALD). MBE growth of a two-dimensional (2D) doping superlattice on backside-illuminated (BSI) detectors provides nearly perfect protection from interface traps, even at trap densities in excess of 10 14 cm -2 . Superlattice-doped, BSI CMOS imaging detectors show no measurable degradation of quantum efficiency or dark current from long-term exposure to pulsed DUV lasers. Wafer-scale superlattice-doping has been used to passivate CMOS and CCD imaging arrays, fully-depleted CCDs and photodiodes, and large-area avalanche photodiodes. Superlattice-doped CCDs with ALD-grown antireflection coatings achieved world record quantum efficiency at deep and far ultraviolet wavelengths (100-300nm). Recently we have demonstrated solar-blind, superlattice doped avalanche photodiodes using integrated metal-dielectric coatings to achieve selective detection of ultraviolet light in the 200-250 nm spectral range with high out-of-band rejection.

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Section: Challenge and Paradox: Atomic Scale Control Over Surfaces Anmentioning

confidence: 99%

Section: Challenge and Paradox: Atomic Scale Control Over Surfaces Anmentioning

confidence: 99%

Superlattice-doped silicon detectors: progress and prospects

et al. 2014

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“…Following the thinning, a series of solvent cleaning steps was used to eliminate residual organic material used in processing steps, such as photoresist and waxes. The devices were then delta doped following processes described in detail elsewhere [9,14]. Briefly, using MBE, a 2.5 nm layer of single crystal silicon with a high density of boron dopant nominally in a single atomic sheet was grown on the back surface of the device.…”

Section: Methodsmentioning

confidence: 99%

Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50% in the near to far ultraviolet range for single photon counting applications

et al. 2012

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We have used molecular beam epitaxy (MBE) based delta-doping technology to demonstrate nearly 100% internal quantum efficiency (QE) on silicon electron-multiplied charge-coupled devices (EMCCDs) for single photon counting detection applications. We used atomic layer deposition (ALD) for antireflection (AR) coatings and achieved atomic-scale control over the interfaces and thin film materials parameters. By combining the precision control of MBE and ALD, we have demonstrated more than 50% external QE in the far and near ultraviolet in megapixel arrays. We have demonstrated that other important device performance parameters such as dark current are unchanged after these processes. In this paper, we briefly review ultraviolet detection, report on these results, and briefly discuss the techniques and processes employed.

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“…The procedure for thinning and delta-doping, as described in Hoenk et al [13], was carried out in the MicroDevices Laboratory at JPL on both Cassini CCDs and EMCCDs [24]. The standard n-channel CCDs used have 1024 square arrays and 12 μm pixels [25].…”

Section: Testing On Functional Devicesmentioning

confidence: 99%

“…Further work on AR coatings in the visible and near-infrared has been successful [12], prompting the current efforts to create similar AR coatings for the UV. The technical limitations preventing new, innovative designs in UV detectors are quickly receding, and further development in the manufacturability of these thinned and doped devices is underway [13]. This paper describes work on the design, modeling, materials considerations, and sample measurements on functional devices as part of a larger effort for development of high-QE, high-performance FUV detectors.…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet antireflection coatings for use in silicon detector design

et al. 2011

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We report on the development of coatings for a charged-coupled device (CCD) detector optimized for use in a fixed dispersion UV spectrograph. Because of the rapidly changing index of refraction of Si, single layer broadband antireflection (AR) coatings are not suitable to increase quantum efficiency at all wavelengths of interest. Instead, we describe a creative solution that provides excellent performance over UV wavelengths. We describe progress in the development of a coated CCD detector with theoretical quantum efficiencies (QEs) of greater than 60% at wavelengths from 120 to 300 nm. This high efficiency may be reached by coating a backside-illuminated, thinned, delta-doped CCD with a series of thin film AR coatings. The materials tested include MgF 2 (optimized for highest performance from 120-150 nm), SiO 2 (150-180 nm), Al 2 O 3 (180-240 nm), , and HfO 2 (240-300 nm). A variety of deposition techniques were tested and a selection of coatings that minimized reflectance on a Si test wafer were applied to functional devices. We also discuss future uses and improvements, including graded and multilayer coatings.

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Delta-doped back-illuminated CMOS imaging arrays: progress and prospects

Cited by 21 publications

References 0 publications

Superlattice-doped silicon detectors: progress and prospects

Superlattice-doped silicon detectors: progress and prospects

Delta-doped electron-multiplied CCD with absolute quantum efficiency over 50% in the near to far ultraviolet range for single photon counting applications

Ultraviolet antireflection coatings for use in silicon detector design

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