Demonstration of 2kV SiC Deep-Implanted Super-Junction PiN Diodes

Abstract

We report successful demonstration of 2kV, SiC super-junction (SJ) PiN diodes formed by deep implantation of Al and N. In our devices, alternating 12μm deep n-type and p-type SJ pillars fabricated on a 10μm pitch and result in a SJ diode with a measured blocking voltage 500V higher than comparable non-SJ diodes. Four activation anneals ranging from 1700 °C to 2000 °C were compared for effectiveness in eliminating post-implant lattice damage, and the optimum anneal condition was identified.