2015
DOI: 10.1109/jstqe.2014.2381468
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Demonstration of a High Extinction Ratio Monolithic CMOS Integrated Nanophotonic Transmitter and 16 Gb/s Optical Link

Abstract: We present a 16-Gb/s transmitter composed of a stacked voltage-mode CMOS driver and periodic-loaded reverse biased pn junction Mach-Zehnder modulator. The transmitter shows 9-dB extinction ratio and 10.3-pJ/bit power consumption and operates with 1.3 μm light. Penalties as low as 0.5 dB were seen as compared to a 25-Gb/s LiNbO 3 transmitter with both a monolithic metal-semiconductor-metal receiver and a reference receiver at 16-Gb/s operation. We also present an analytic expression for relative transmitter pen… Show more

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Cited by 36 publications
(11 citation statements)
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“…3a. We compute the voltage according to equation 2 by using a SiO 2 dielectric layer and compare the result with that of typical Si modulators [93][94][95][96][97][98][99][100][101][102][103] based on p-n junctions or capacitors in the same range of voltages. By biasing SLG to |E F | > E ph /2, where absorption is small, a neff modulation ~2 x 10 −3 can be obtained [79].…”
Section: Graphene-based Modulatorsmentioning
confidence: 99%
“…3a. We compute the voltage according to equation 2 by using a SiO 2 dielectric layer and compare the result with that of typical Si modulators [93][94][95][96][97][98][99][100][101][102][103] based on p-n junctions or capacitors in the same range of voltages. By biasing SLG to |E F | > E ph /2, where absorption is small, a neff modulation ~2 x 10 −3 can be obtained [79].…”
Section: Graphene-based Modulatorsmentioning
confidence: 99%
“…With the monolithic integration approach, the cofabrication of optical devices and CMOS transistors on the same silicon wafer provides versatile possibilities of new optoelectronic functions and dramatic improvement for system footprint and power dissipation. For example, in 2015, based on the 90-nm SOI process node, IBM introduced the CMOS9GW silicon photonic platform, and a 16-Gb/s full transceiver link has been demonstrated in [258]. Based on the same platform, the speed has been boosted to 56 Gb/s by using the fourlevel PAM approach [259].…”
Section: I N T E G R At I O Nmentioning
confidence: 99%
“…While today the short-reach optical interconnects (<100m) inside the datacenter are dominated by low cost multimode VCSEL-links, there is a growing demand for longer reach optical links in intra and inter-datacenter interconnects (up to 10km) for datacenter expansion. Singlemode fiber (SMF) optical links employing silicon and/or heterogeneous III-V/Si photonics manifest themselves as promising candidates for this market due to their potential for realizing an integrated WDM transceiver with low cost [1][2][3][4][5][6][7][8][9][10]. Integration technologies varying from monolithic silicon photonics [1][2][3][4] to hybrid III-V/Si [5][6][7][8][9][10] have been investigated extensively in academia as well as industry.…”
mentioning
confidence: 99%