Dendritic Growth of Germanium Crystals

Bennett, A. I.; Longini, R. L.

doi:10.1103/physrev.116.53

Cited by 115 publications

(50 citation statements)

References 9 publications

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“…The rate controlling step for growth in the <111> direction is probably nucleation of new atomic ledges, requiring simultaneous positioning of three atoms on the crystal lattice sites on a defect free surface. As has been pointed out by many investigators (15,18,19,20), the point of exit of a twin boundary at the crystal surface can act as a nucleation site for atomic steps.…”

Section: Reconstruction and Atomic Roughness Of The Crystal Surfacementioning

confidence: 97%

Some observations on the amorphous to crystalline transformation in silicon

Drosd

Washburn

1982

Journal of Applied Physics

243

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An atomistic model for the transformation of amorphous (α) to crystalline silicon films while in contact with a crystalline substrate is presented. The atomic structure of the {100}, {110}, and {111} surfaces is examined and related to the observed interface migration rates. The assumption that for an atom to attach successfully to the crystal it must complete at least two undistorted bonds, leads to the prediction that the {100} amorphous/crystalline interface should advance fastest and the {111} slowest. The origin of crystal defects is discussed in terms of the atomistic recrystallization mechanism. Microtwins are found to be a logical consequence of crystallization on the {111} surfaces but are not expected to form on any other interface. Once microtwins are formed they can increase the recrystallization rate of a {111} surface. This phenomenon is both described in the model and experimentally observed.

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Section: Reconstruction and Atomic Roughness Of The Crystal Surfacementioning

confidence: 97%

Some observations on the amorphous to crystalline transformation in silicon

Drosd

Washburn

1982

Journal of Applied Physics

243

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“…Early work on faceted dendritic growth, summarized by Givargizov, 2 extends at least back to Stranski in 1949. Experimental and conceptual work in the 1950s and 1960s from Bennett and Longini, 17 Wagner, 18 Hamilton and Seidensticker, 19 and Wagner and Treuting 20 developed ideas relying on twin planes and "reentrant corners" at twin plane edges, motivated by the prospect of directly growing substrates of germanium or silicon as ribbons from the melt. The reentrant corners give incorporation sites that favor growth over sites on singular surfaces.…”

confidence: 99%

“…16 Two-dimensional anisotropic growth generally depends on lower crystal symmetry or defects. 2 While the growth of thin silicon and germanium sheets, catalyzed at the edges of {111} twin planes, has been known for some time, [17][18][19][20][21] reports on this mechanism for silicon typically deal with crystallization from the melt at length scales of 100 μm to 1 mm. 22 At smaller scales, diamond nanoplatelets having 10-nm-scale thicknesses and 100-nm-scale extents have been reported, apparently also catalyzed by twin planes.…”

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confidence: 99%

Titanium catalyzed silicon nanowires and nanoplatelets

et al. 2013

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Silicon nanowires, nanoplatelets, and other morphologies resulted from silicon growth catalyzed by thin titanium layers. The nanowires have diameters down to 5 nm and lengths to tens of micrometers. The two-dimensional platelets, in some instances with filigreed, snow flake-like shapes, had thicknesses down to the 10 nm scale and spans to several micrometers. These platelets grew in a narrow temperature range around 900 celsius, apparently representing a new silicon crystallite morphology at this length scale. We surmise that the platelets grow with a faceted dendritic mechanism known for larger crystals nucleated by titanium silicide catalyst islands

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“…The theories of growth from the melt particularly with respect to normal freezing and zone melting 171 have been discussed in great detail elsewhere [14][15][16]. Chemical reactions occurring at the interface of two phases depend not only on the chemical transformation itself but also on the transport of reactants or products to or from the interface.…”

Section: Discussionmentioning

confidence: 99%

Doping gradients in layers of gallium phosphide grown by liquid epitaxy

Sudlow¹,

Mottram²,

Peaker³

1972

J Mater Sci

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Layers of epitaxial gallium phosphide doped with either tellurium, sulphur or zinc over the range 10 '~ to 10 '8 cm-2 have been grown from gallium solution using a vertical dipping system. These layers of thickness 60 to 80 /~m have been produced on the (1 00) and (111)B faces of gallium phosphide single crystal substrates at high growth rates. Doping gradients have been investigated by a Schottky barrier technique over an angle lapped region of the grown slice, measuring the capacitance voltage characteristics of the individual barriers. Significant changes in doping level have been observed throughout the thickness of the layers and these are related to the variation of distribution coefficient, the losses of impurity from the system and the presence of competing background impurity systems.

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Dendritic Growth of Germanium Crystals

Cited by 115 publications

References 9 publications

Some observations on the amorphous to crystalline transformation in silicon

Some observations on the amorphous to crystalline transformation in silicon

Titanium catalyzed silicon nanowires and nanoplatelets

Doping gradients in layers of gallium phosphide grown by liquid epitaxy

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