Density of States in Intrinsic and n/p-Doped Hydrogenated Amorphous and Microcrystalline Silicon

Larbi, Fadila; Abdelkader, Belfedal; Sib, J.D.; Bouizem, Y.; Chahed, L.

doi:10.4236/jmp.2011.29124

Cited by 10 publications

(1 citation statement)

References 16 publications

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“…In modern microelectronics, a number of special devices are made from the hydrogenated silicon Si:H. Gap states in B-doped microcrystalline Si:H were examined by analysis of the subgap optical spectra [12]. The absorption of the boron doped material was found to be very high.…”

Section: Analysis Of Published Datamentioning

confidence: 99%

Role of boron in formation of secondary radiation defects in silicon

Pagava

Chkhartishvili

Maisuradze

et al. 2015

EEJET

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Ґрунтуючись на колишні роботи авторів, досліджено роль домішок бору (B) у формуванні вторинних радіаційних дефектів в кристалах кремнію (Si). Залежності цих процесів від температури ізохронного відпалу (в інтервалі 80-600 °C) вивчені з використанням холлівських вимірювань температурних залежностей (в інтервалі 100-300 К) концентрації і рухливості дірок в кремній до і після опромінення електронами з енергією близько 8 МеВ при дозі 5•10 15 см-2 Ключові слова: кремній, легуючий бор, радіаційні дефекти і комплекси Основываясь на прежние работы авторов исследована роль примесей бора (B) в формировании вторичных радиационных дефектов в кристаллах кремния (Si). Зависимости этих процессов от температуры изохронного отжига (в интервале 80-600 °C) изучены с использованием холловских измерений температурных зависимостей (в интервале 100-300 К) концентрации и подвижности дырок в кремний до и после облучения электронами с энергией около 8 МэВ при дозе 5•10 15 см-2 Ключевые слова: кремний, легирующий бор, радиационные дефекты и комплексы

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Section: Analysis Of Published Datamentioning

confidence: 99%

Role of boron in formation of secondary radiation defects in silicon

Pagava

Chkhartishvili

Maisuradze

et al. 2015

EEJET

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Employing constant photocurrent method for the study of defects in silicon thin films

2019

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Different optical characterization techniques have been performed on a series of microcrystalline silicon thin films deposited using very high-frequency-assisted plasma-enhanced chemical vapor deposition process. The constant photocurrent method has been employed to study the defects states in density of states spectra of hydrogenated microcrystalline silicon thin films. The photocurrent measurements demonstrate anisotropy in the optoelectronic properties of the material. We have analyzed the optical absorption coefficient from UV spectroscopy and with the help of constant photocurrent method. The spectra have been analyzed in broad region and are presented for both the cases, i.e., surface and bulk light scatterings. The spectra were interpreted in terms of disorder, resulting defect density, crystalline/amorphous volume fractions and material morphology. The subgap-related parameters such as absorption coefficient, characteristic energy E 0 of tail states and density of subgap defect states together with an estimate of the bandgap of silicon films prepared at various crystalline fractions have also been estimated. The density of localized tail states is found to fall exponentially toward the gap with band tail width of about 110 meV.

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Improvement in a-Si:H silicon solar cells with using double p-type window layers based on nanocrystalline silicon oxide

Belfar

Kouider

2021

Optik

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Density of States in Intrinsic and n/p-Doped Hydrogenated Amorphous and Microcrystalline Silicon

Cited by 10 publications

References 16 publications

Role of boron in formation of secondary radiation defects in silicon

Role of boron in formation of secondary radiation defects in silicon

Employing constant photocurrent method for the study of defects in silicon thin films

Improvement in a-Si:H silicon solar cells with using double p-type window layers based on nanocrystalline silicon oxide

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