Dependence of memory characteristics of fullerene-containing polymer on the kind of gate metal

Nakajima, Akira; Shoji, Atsushi; Nagano, Kohei; Kajihara, Jun

doi:10.7567/jjap.54.100303

Cited by 3 publications

(3 citation statements)

References 24 publications

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“…It had not been used as carrier conducting material of electronic devices and its characteristics related to carrier transport had not been investigated. On the other hand, a number of reports indicated that gate insulating organic polymers containing fullerene molecules, referred to as nanocomposite organic polymers, were promising for organic flash memories because of their relatively simple fabrication techniques [30][31][32][33][34][35]. In these nanocomposite organic polymers, the matrix polymers are not EB resist materials.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Short Review on Fullerene-Containing Electrically Conducting Electron Beam Resist for Organic Biosensors with Nanostructures

Nakajima¹

2018

Adv Tech Biol Med

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Section: Introductionmentioning

confidence: 99%

“…In these nanocomposite organic polymers, the matrix polymers are not EB resist materials. It has been suggested that electrons or holes are injected into and stored in the LUMO or HOMO levels of the fullerenes and the carriers are transferred through the levels in the nanocomposite organic polymers [32,33].…”

Section: Introductionmentioning

confidence: 99%

Short Review on Fullerene-Containing Electrically Conducting Electron Beam Resist for Organic Biosensors with Nanostructures

Nakajima¹

2018

Adv Tech Biol Med

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“…They have not been used as carrier conducting materials for electronic devices, and their characteristics related to carrier transport have not been investigated yet. On the other hand, there have been reports indicating that gate insulating organic polymers containing fullerene molecules, referred to as nanocomposite organic polymers hereafter, are promising materials for organic flash memories because of their relatively simple fabrication technique 26 – 31 . Since it is suggested that electrons or holes are injected into and stored in the LUMO or HOMO levels of the fullerenes and the carriers are transferred through the levels in the nanocomposite organic polymers, there is a possibility of creating EB-patternable electrically conductive nanocomposite organic polymers having submicron or nanometer lateral sizes if organic EB resists can be used for the matrix polymers.…”

Section: Introductionmentioning

confidence: 99%

Fullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices

Nakajima

Tabei

Yasukawa

2017

Sci Rep

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An outstanding issue with organic devices is the difficulty of simultaneously controlling the lateral size and position of structures at submicron or nanometer scales. In this study, nanocomposite electron beam (EB) organic resists are proved to be excellent candidates for electrically conductive and/or memory component materials for submicron or nanometer lateral-scale organic electronic devices. The memory and the resist patterning characteristics are investigated for a positive electron beam resist of ZEP520a containing [6,6]-phenyl-C61 butyric acid methyl ester (PCBM). Regarding the memory characteristics, good programming and excellent retention characteristics are obtained for electrons. The carrier transfer and retention mechanisms are also investigated. Regarding the resist patterning characteristics, it is found that line patterns (square patterns) of ZEP520a containing PCBM can be made with widths (side lengths) of less than 200 nm by using an extremely simple process with only EB exposures and developments. The distribution of PCBM molecules or their aggregations is also clarified in ZEP520a containing PCBM. The results of this study open the door to the simple fabrication of highly integrated flexible memories and electrical wires as well as of single-electron or quantum devices, including quantum information devices and sensitive biosensors for multiplexed and simultaneous diagnoses.

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Electric Transport Properties of a Model Nanojunction “Graphene–Fullerene C60–Graphene”

2020

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In the framework of the density functional theory and method of nonequilibrium Green functions (DFT [Formula: see text] NEGF), the electric transport properties of the model nanojunction “Graphene–Fullerene C[Formula: see text]–Graphene” were studied. The transmission spectra, the density of states, the current–voltage characteristic (CVC) and the differential conductivity of the nanojunction are determined. The appearance of a feature of the DOS nanotransition is revealed. This is due to the fact that the Lowest Unoccupied Molecular Orbital (LUMO) of C[Formula: see text] becomes closer to the Fermi level of metal substrates than its Highest Occupied Molecular Orbital (HOMO). It is shown that Coulomb stairs associated with the Coulomb blockade effect appear on the CVC of the nanotransition. The same changes are observed on the differential conductivity spectrum in the form of eight distinct peak structures arising with period [Formula: see text][Formula: see text]V. The comparison of the electric transport characteristics of single-fullerene nanodevices with various electrode materials (graphene, gold, platinum) are presented. It was found that the voltage period of Coulomb features [Formula: see text] in a nanodevice with graphene electrodes is less than in nanodevices with platinum and gold electrodes. It was revealed that the considered nanotransition has negative differential conductivity. The results obtained can be useful in calculating promising elements of single-electronics.

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Dependence of memory characteristics of fullerene-containing polymer on the kind of gate metal

Cited by 3 publications

References 24 publications

Short Review on Fullerene-Containing Electrically Conducting Electron Beam Resist for Organic Biosensors with Nanostructures

Short Review on Fullerene-Containing Electrically Conducting Electron Beam Resist for Organic Biosensors with Nanostructures

Fullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices

Electric Transport Properties of a Model Nanojunction “Graphene–Fullerene C60–Graphene”

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