Dependence of MOS Device Radiation-Sensitivity on Oxide Impurities

Hughes, H.L.; Baxter, Ronald; Phillips, B. F.

doi:10.1109/tns.1972.4326842

Cited by 107 publications

(23 citation statements)

References 13 publications

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“…On the other hand no significant reduction of this type is apparent in a later study (6). A convergence of Qo values for different sizes and shapes, as typically observed for long anneal times, is more consistent with such a mechanism.…”

Section: Discussionsupporting

confidence: 79%

“…In such studies the metallization for the MOS structure is considered to play a passive role, other than serving as an electrode, with the following two exceptions. In addition, sintering conditions for the aluminum metallization have been found (6) to affect radiation hardness of MOS structures. In addition, sintering conditions for the aluminum metallization have been found (6) to affect radiation hardness of MOS structures.…”

mentioning

confidence: 99%

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Effects of MOS Metallization Geometry and Processing on Mobile Impurities

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1975

J. Electrochem. Soc.

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The possible effects on MOS structures of metallization material, method of vacuum deposition, method of electrode delineation, electrode size and geometry, post-metallization heat-treatments, and hydrogen incorporation were investigated. It was found that a minimum in the level of mobile ionic contamination (Qo) was achieved in a time the order of 15 min for annealing at 500~ in dry nitrogen. The minimum Qo values were proportional to either the diameter of circular electrodes or the width of rectangular electrodes in the range of 5-30 mil. Results were similar for both aluminum and aluminumcopper-silicon metallization as well as for either shadow masked or photomasked electrodes. The assumed presence of hydrogen, either arising from that produced in the deposition chamber during filament and electron beam evaporation as monitored by residual gas analysis or from hydrogen anneals prior to metallization, resulted in increased Qo for short anneal times. In interpreting the results, consideration was given mechanisms which would decrease Qo, such as diffusion of contaminant (probably sodium) to and evaporation from the electrode periphery, and increase Qo, such as introduction of contaminant and/or aluminum from the electrodes or substitution of protons for contaminant ions at traps.The importance of minimizing mobile alkali ion contamination (Qo) in silicon device processing is well recognized (1). Such contamination in silicon dioxide can affect the threshold voltage and stability of MOS devices. Adverse effects on bipolar devices, primarily Key words: mobile impurity monitoring, 1ViOS electrode size effects, hydrogen effects, annealing effects, ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.210.126.199 Downloaded on 2015-06-28 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.210.126.199 Downloaded on 2015-06-28 to IP

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Section: Discussionsupporting

confidence: 79%

mentioning

confidence: 99%

Effects of MOS Metallization Geometry and Processing on Mobile Impurities

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1975

J. Electrochem. Soc.

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“…Incorporating alkali atoms into an SiO 2 network is a notoriously inconvenient phemomenon in electron devices. Impingement of both Li and O atoms on the SiO 2 surface leads to an insertion reaction as described by this scheme [27] …”

Section: Discussionmentioning

confidence: 99%

Correlation between interfacial structure and c-axis-orientation of LiNbO3 films grown on Si and SiO2 by electron cyclotron resonance plasma sputtering

Akazawa

Shimada

2004

Journal of Crystal Growth

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“…SIMS depth profiling of alkali elements in insulators presents a particular problem because of the drift of the alkalis due to the electric field. [9][10][11][12] The alkali ions migrate into the sample as its surface is being sputtered and are distributed throughout the oxide layer. The migration stops at the conductive SiO 2 /Si interface.…”

Section: Methodsmentioning

confidence: 99%

Protection of Silicon Wafers from Alkali Contamination during High-Temperature Processing Using Electric Field

Beregovsky

Klyuch²,

Raskin³

et al. 2000

J. Electrochem. Soc.

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A novel method for reducing metallic contamination of silicon wafer surfaces and oxide layers during high temperature processing is described. It involves the application of an electric field across wafers exposed to oxidizing and inert annealing ambients. Secondary ion mass spectrometry, capacitance-voltage, and vapor-phase decomposition/total reflection X-ray fluorescence techniques were used to measure metallic contamination levels in the silicon oxide layers. Results indicate that a positive bias, applied to the silicon at high temperature, provides a significant reduction of Li, Na, and K content in the oxides, compared with conventional wafer processing involving both oxidation and annealing treatments. The results were interpreted within the framework of a developed model that takes into account migration of alkali ions in the presence of an electric field. A thermodynamic approach to alkali metal oxidation was used to explain the similarity of the results in oxygen and argon ambients. ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-03-15 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 128.255.6.125 Downloaded on 2015-03-15 to IP

show abstract

Dependence of MOS Device Radiation-Sensitivity on Oxide Impurities

Cited by 107 publications

References 13 publications

Effects of MOS Metallization Geometry and Processing on Mobile Impurities

Effects of MOS Metallization Geometry and Processing on Mobile Impurities

Correlation between interfacial structure and c-axis-orientation of LiNbO3 films grown on Si and SiO2 by electron cyclotron resonance plasma sputtering

Protection of Silicon Wafers from Alkali Contamination during High-Temperature Processing Using Electric Field

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