Dependence of radiation-induced interface traps on gate electrode material in metal/SiO2/Si devices

Abstract

The density of radiation-induced interface traps in a metal-oxide-semiconductor (MOS) device has been found to depend on the electrode material used to form the gate. For a given oxide process, this dependence correlates well with the gate-induced interfacial stress distribution in the MOS system. The gate-induced bond strain gradient model that we proposed previously may be readily used to explain the results.

Improvement in radiation hardness of oxide by successive irradiation-then-anneal treatments

“…In this work, we propose a simple way to efficiently reduce the radiation sensitivity of oxide which requires no fabrication variations. It is well known that the number of radiation-induced positive charges near the SiO2/Si interface is strongly dependent on the interfacial strain [4][5][6]. The larger the interfaciai strain, the worse the radiation hardness of oxide.…”

Stress Reliability Comparison of Metal–Oxide–Semiconductor Devices with CoSi2 and TiSi2 Gate Electrode Materials

“…It is known that reliability of MOS devices is strongly related to the strain at SiO 2 /Si interface. [7][8][9][10] The Si consumption during CoSi 2 formation is about 25% greater than that during TiSi 2 formation, 11) and the interfacial-stress-difference between TiSi 2 and CoSi 2 has been reported to be more than 20%. 5) This interfacial stress difference is the reason that CoSi 2 samples have inferior stress reliability than TiSi 2 samples.…”