Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

Kim, Wan Gee; Sung, Min Gyu; Kim, Sook Joo; Kim, Ja Yong; Moon, Ji Won; Yoon, Sung Joon; Kim, Jung Nam; Gyun, Byung Gu; Kim, Taeh Wan; Kim, Chi Ho; Byun, Jae-Yong; Kim, Won; Youn, Te One; Yoo, Jun-Hyun; Oh, Jang Won; Kim, Ho Joung; Joo, Moon Sig; Roh, Jae–Sung; Park, Sung Ki

doi:10.1109/essderc.2010.5618197

Cited by 17 publications

(9 citation statements)

References 6 publications

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“…For the OxRAM memory elements addressed in this paper, the MIM structure is generally composed of metallic electrodes sandwiching an active layer, usually an oxygen-deficient oxide. A large number of resistive switching oxides, like HfO 2 , Ta 2 O 5 , NiO, TiO 2 or Cu 2 O, are reported in the literature [7][8][9][10]. The Valency Change Mechanism (VCM) occurs in specific transition metal oxides and is triggered by a migration of anions, such as oxygen vacancies.…”

Section: Introductionmentioning

confidence: 99%

Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Bocquet

Aziza

Zhao

et al. 2014

JLPEA

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Emerging non-volatile memories based on resistive switching mechanisms attract intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (OxRAM) gather noteworthy performances, such as fast write/read speed, low power and high endurance outperforming therefore conventional Flash memories. To fully explore new design concepts such as distributed memory in logic, OxRAM compact models have to be developed and implemented into electrical simulators to assess performances at a circuit level. In this paper, we present compact models of the bipolar OxRAM memory based on physical phenomenons. This model was implemented in electrical simulators for single device up to circuit level. J. Low PowerElectron. Appl. 2014, 4 2

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Section: Introductionmentioning

confidence: 99%

Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Bocquet

Aziza

Zhao

et al. 2014

JLPEA

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“…A large number of oxide-based materials showing a resistive switching are repOIied in the literature [21][22][23]. Among them, metal oxides like Hf02, Ta20S, NiO, Ti02 or CU20 are promising candidates due their compatibility with CMOS processes and high on/off resistance ratio.…”

Section: B Oxrram Technology Principlementioning

confidence: 99%

Crossbar architecture based on 2R complementary resistive switching memory cell

Zhao

Zhang

Klein

et al. 2012

Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures

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Emerging non-volatile memories (e.g. STT-MRAM, OxRRAM and CBRAM) based on resistive switching al'e undel' intense R&D investigation by both academics and industl"ies. They provide high performance such as fast wl'ite/read speed, low power and good enduJ"ance (e.g. >10 12 ) beyond Flash memOl·ies. Howevel' the conventional access architecture based on 1 transistor + 1 memOl'y cell limits its storage density as the selection tJ"ansistol' should be lal'ge enough to enSut'e enough CutTent fOl' the switching opeJ"ation, This papel' describes a design of crossbar al'chitecture based on 2R complementary I'esistive switching memol'y cell, This at'chitectut'e allows fewel' selection transistOl's, and minimum contacts between memory cells and CMOS control circuits, The complementary cell and pat'allel data sensing mitigate the impact of sneak CutTents in the crossbar architectut'e, We performed transient simulations based on two memOl), technologies: STT-MRAM and OxRRAM to validate the functionality of this design by using CMOS 65 nm design kit and memOl), compact models,

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“…A plethora of transition metal oxides (TMO) have been reported [23][24][25] to exhibit stable resistive switching behavior. TMO sandwiched between active (Top) and passive (Bottom) metal electrodes broadly form the device composition, which can take the place of a 'Via' in the Back-end-of-Line (BEOL) of standard CMOS process as shown in Fig.…”

Section: ) Oxrram Technologymentioning

confidence: 99%

RRAM-based FPGA for "normally off, instantly on" applications

Turkyilmaz

Onkaraiah

Reyboz

et al. 2012

Proceedings of the 2012 IEEE/ACM International Symposium on Nanoscale Architectures

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Normally off, instantly on" applications are becoming common in our environment. They range from healthcare to video surveillance. As the number of applications and their associated performance requirements grow rapidly, more and more powerful, flexible and power efficient computing units are necessary. In such a context, Field Programmable Gate Arrays (FPGA) architectures present a good trade-off between performance and flexibility. However, they consume high static power and can hardly be associated with power gating techniques due to their long context restoring phase. In this paper, we propose to integrate non-volatile resistive memories in configuration cells in order to instantly restore the FPGA context. We then show that if the circuit is in 'ON' state for less than 42% of time, non-volatile FPGA starts saving energy compared to classical FPGA. Finally, for a typical application with only 1% of time spent in 'ON' state, the energy gain reaches 50%.

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Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide

Cited by 17 publications

References 6 publications

Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Crossbar architecture based on 2R complementary resistive switching memory cell

RRAM-based FPGA for "normally off, instantly on" applications

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