Dependence of the Total Mobility in a One‐Band Model Applicationto n‐Type MoTe₂

Abstract

Une Btude comparative, dans un modble it une bande, de l'expression de la mobilite totale des porteurs, d6duite de la formule de Debye-Conwell et de la rbgle de Mathiessen, est proposke. Nous donnons la variation resultante de la mobilitk et du terme cinktique du pouvoir thermoBlectrique. Les rBsultats expirimentaux de conductivitB Blectrique de pouvoir thermoB1ectriqu.e obtenus sur MoTe, monocristallin sont expliquBs par un modhle classique de semiconducteur compensk. Nous montrons que l'application de la rbgle de Mathiessen, avec des exposants de mobilitk proches de leur valeur thborique, permet de lisser correctement I'ensemble des rBsultats expkrimentaux. Le modhle adopt6 est en bon accord avec la structure de bande des dichalcog6nures. Le niveau donneur, liB it la presence d'atomes de brome, est sit& it 9,5 meV de la bande de conduction.

p-n junctions in molybdenum ditelluride

“…were p-type [l] while those prepared by the vapour transport method with bromine as transport agent were n-type [6]. Therefore the idea used in this work was to anneal under bromine atmosphere a p-type single crystal to obtain a p-n junction.…”

Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits

“…According to the conventional equation μ = ( L / W )( d / ε 0 ε r V ds )(Δ I ds /Δ V bg ), where μ is the field‐effect mobility, L / W is the channel length‐to‐width ratio and is 1 for this study, ε 0 is the permittivity in vacuum, ε r is 3.9 for SiO 2 , and d is the thickness of the dielectric layer (285 nm), we obtained mobilities of 0.03 and 0.30 cm 2 V −1 s −1 , extracted at V ds = 10 V in the high V bg region, for electrons and holes, respectively. Both mobilities were much lower than the theoretical prediction in the literature, implying the existence of a large contact resistance in the layered MoTe 2 transistors.…”

“…Other distinctive properties have also been addressed in bulk MoTe 2 . Its mobility at room temperature (RT), for example, can theoretically reach up to 200 cm 2 V −1 s −1 . Both p‐ and n‐type materials were synthesized through controlling the growth conditions in MoTe 2 crystals, leading to their use in light‐emitting transistors (p–n junctions) .…”

“…The mechanical properties of the single‐walled MoTe 2 nanotubes were found to strongly depend on the diameter and chirality of the tubes . Although the electrical properties of bulk MoTe 2 have been studied, layered MoTe 2 flake structures have not been investigated thus far and are still puzzling.…”

A possible high-mobility signal in bulk MoTe2: Temperature independent weak phonon decay

“…It was reported that the theoretical value of carrier mobility in bulk hexagonal (2H) MoTe 2 could be up to 200 cm 2 V 1 s 1 . 9 After the formation of few-layered compounds, people always hope a significant increase of carrier mobility by orders of magnitude just like other layered materials. 10 However, the currently reported mobility of few-layer 2H-MoTe 2 in adjustable bipolar transistor is less than 1 cm 2 V 1 s 1 .…”