p-n junctions in molybdenum ditelluride

Abstract

p‐n junctions in molybdenum ditelluride have been fabricated by annealing p‐type single crystals under bromine atmosphere at 873 K for 1 h in sealed silica tubes. The I–V characteristics of the diodes can be analysed in terms of classical exponential law with an ideality factor around 1.6. The built‐in potential deduced from C–V measurements is estimated to be around 0.42 eV. At room temperature the current takes place via thermionic emission and recombination. Electrically active defects are present at the interface since C varies with frequency.

Growth of textured nonstoichiometric MoTe2 films from Mo/Te layers and their use as precursor in the synthesis of MoTe2−xSx films

“…X-ray diffraction studies also make it clear that MoTe 2 films like 2H-MoS 2 can be easily cleaved in the direction parallel to the van-der Waals planes. The measured value of 13.88 Å matched well with those13.96 Å for single crystals [17] and 13.964 Å [20] on thin films and from the literature [26].…”

“…It has been shown that stoichiometric films of MoTe 2 are difficult to achieve, whatever, technique is being used. [19][20]. Recently, it has been shown that it is possible to prepare reproducible samples of MoTe 2 films successfully either by annealing of Mo under Te pressure [21] or by co-evaporation of Mo and Te by using electron beam as heating source [22].…”

“…In case of single crystals, use of tellurium as flux results in a p-type MoTe 2 while vapour transport method using bromine as a transporting agent led to the n-type MoTe 2 crystals [18]. MoTe 2 p-n junctions have been fabricated by annealing p-type single crystals under bromine atmosphere which showed that such diodes exhibits an ideality factor nZ1.6 and a built in potential of about 0.42 eV [20]. It has been shown that stoichiometric films of MoTe 2 are difficult to achieve, whatever, technique is being used.…”

Ambipolar MoTe2 Transistors and Their Applications in Logic Circuits

“…Its mobility at room temperature (RT), for example, can theoretically reach up to 200 cm 2 V −1 s −1 . Both p‐ and n‐type materials were synthesized through controlling the growth conditions in MoTe 2 crystals, leading to their use in light‐emitting transistors (p–n junctions) . In addition, a phase transition was observed between the semiconducting α‐MoTe 2 and the metallic β‐MoTe 2 because of distortion of the octahedral coordinates .…”

ELECTRONIC STRUCTURE CALCULATIONS ON MoTe2 WITH ROTATED PLANES

“…1 Due to their high absorption coefficient, transition metals dichalcogenides are very promising where WSe 2 single crystal with conversion efficiencies in excess of 14% have been achieved. 2 (2) Superconductivity has been observed in NbSe 2 .…”