Dependence of the Transfer Characteristics of Metal-Oxide Thin-Film Transistors on the Temperature of an Extended Oxidizing Heat-Treatment

P‐21: Post‐Annealing Optimization for Top‐Gate Amorphous In‐Ga‐Zn‐O Thin‐Film Transistors with Atomic‐Layer‐Deposited Ultrathin AlOx Dielectric

“…In contrast, the C-V curves of annealed devices exhibited no stretched-out behavior, indicating the effective suppression of shallow-level defects at the interface through annealing. Typically, the repair of oxygen vacancies requires oxygen annealing (16,20). However, as shown in Fig.…”

P‐1.3: Application of a Kinetic Model to the Characterization of Donor‐Defects in a Fluorinated Metal‐Oxide Semiconductor

“…Recently, a model describing the kinetics of oxidant diffusion and an oxidation-reduction reaction of donordefects in metal-oxide (MO) semiconductors has been proposed [1]. Deploying thin-film transistors (TFTs) based on active channels of different compositions such as indium-gallium-zinc oxide (IGZO) with different atomic ratios and indium-tin-zinc oxide (ITZO), one can extract the model parameters related to the reaction rate constants and their activation energies [1], [2]. In this work, the model is applied to characterize donor-defects in fluorinated IGZO (i.e.…”