Depleted Sb₂S₃ Thin Film Photoconductive Detectors with Fast Response Speed and High Polarization Sensitivity

Abstract

Sb 2 S 3 crystals are composed of numerous 1D molecular chains contacted by van der Waals forces, easily forming 1D nanowires. Many scientific researchers focus on the research of Sb 2 S 3 nanowire PDs. The PD based on Sb 2 S 3 nanowires built on Si/SiO 2 by Zhong et al. [14] has achieved the ON/OFF ratio of 210, the responsivity of 1152 A W −1 , and the specific detectivity of 2 × 10 13 Jones. Zhang et al. [15] added Au nanoparticles to the Sb 2 S 3 nanowires and achieved high responsivity (59.5 A W −1 ), but the response speed was still relatively slow (≈0.2 s). Wang et al. [16] used CuSCN to attach to Sb 2 S 3 nanowires, which exhibited a switching ratio of 100 and the response time of 0.15 s. Ye et al. [17] used CVD to prepare high-quality Sb 2 S 3 nanowires. The PD demonstrated a quite large responsivity of 65 A W −1 , excellent detectivity of 2.1 × 10 14 Jones, and short response time of about 76 ms. The above researches show that the Sb 2 S 3 nanowire PD exhibits excellent performance. There are still some aspects that can be improved, such as slow response speed, complicated preparation process, and difficulty in integration. In our previous work, we used the rapid thermal evaporation (RTE) method to fabricate high-quality Sb 2 S 3 film and obtain excellent photoelectric properties for thin film PD. [18,19] The Sb 2 S 3 thin film PDs have advantages in uniformity, integration, and cost. The main performance parameters (responsivity and detectivity) of PDs are fundamentally extracted from photocurrent and dark current, which are limited by Sb 2 S 3 material properties and device structure. Therefore, reducing dark current and increasing photocurrent are the most direct and effective methods to improve the performance of PDs. The device structure, deposition process and performance of Sb 2 S 3 PDs need to be further investigated and developed.As a 1D ribbon material, Sb 2 S 3 exhibits strong anisotropy in optical, electrical, and defect properties. [20] The orientations of Sb 2 S 3 film could be controlled by substrate conditions and deposition techniques. [21,22] The Sb 2 S 3 film with [hk0] orientation means molecular chains are parallel to the substrate. The absorption capability of Sb 2 S 3 molecular chains changes along with the intersection (polarization) angle (θ) between light polarization direction and axis, which results in polarizationsensitive photo response. [23] The Sb 2 S 3 thin film PDs have large potential in polarized light detection.

A Submicrosecond-Response Ultraviolet–Visible–Near-Infrared Broadband Photodetector Based on 2D Tellurosilicate InSiTe3

“…Historically, research on 2D optoelectronics materials has been focusing on single or binary elemental materials. − Recently, there is a progressive focus toward 2D ternary materials due to their tunable features originating from the added freedom of stoichiometry variation. − The ternary compound InSiTe 3 belongs to the well-known AMCh 3 family (A = In, Cr, Mn, Al, or Fe; M = Si, Ge, or P; and Ch = S, Se, or Te). Some compounds in this family like FePSe 3 , MnPSe 3 , and Cr 2 Ge 2 Te 6 have been intensively studied and show rich magnetic and magnetoelectric physics, such as pressure-driven spin-crossover, antiferromagnetic Néel order, and long-range ferromagnetic order .…”

Self-Powered Sb2S3 Thin-Film Photodetectors with High Detectivity for Weak Light Signal Detection

“…Antimony sulfide (Sb 2 S 3 ) with low-cost, nontoxic, and abundant elements is a fascinating material for PDs. − Sb 2 S 3 thin-film PDs possess an excellent light absorption coefficient (>10 5 cm –1 ) at visible light, which are suitable for weak light signal detection. − At present, many studies on Sb 2 S 3 PDs mainly focus on the material properties and nanowire structure. Ye et al fabricated Sb 2 S 3 nanowires (NWs) via a chemical vapor deposition technique and obtained a responsivity of 65 A W –1 and a specific detectivity of 2.1 × 10 14 Jones.…”

“…Sb 2 S 3 thin-film PDs have large advantages in uniformity, integration, and cost. Rapid thermal evaporation (RTE) is an attractive process for large-area preparation of crystalline Sb 2 S 3 in our previous work, which can be effectively used in Sb 2 S 3 thin-film PDs. ,, …”

Single-Crystal Sb2S3 Tube Prepared by Chemical Vapor Deposition for a 1 cm Photodetector Application

“…18−20 Sb 2 S 3 is a good choice for high-performance visible or infrared light detectors since it covers part of the visible area of the spectral region. 21,22 The Sb 2 S 3 nanoflower rigid photodetector prepared by Shen et al displayed a photocurrent-to-dark current ratio of roughly 38 at a bias voltage of 1 V. 23 properties, great stability, good repeatability, and an 8.6 dB linear dynamic range. 24 Liu et al used the CVD method to grow highly crystalline one-dimensional Sb 2 S 3 nanowires on SiO 2 /Si substrates.…”

“…Among the various inorganic semiconductor materials, metal–sulfur compounds have been extensively explored for their optoelectronic characteristics and have been employed in photodetectors among the different inorganic semiconductor materials. , Sb 2 S 3 is a significant semiconductor which has a direct-band gap binary metal sulfide and a V–VI orthogonal crystal system with a space group of D 16 20 . Its direct bandwidth can be adjusted within the range of 1.50–2.20 eV by changing its size, shape, and crystallinity. − Sb 2 S 3 is a good choice for high-performance visible or infrared light detectors since it covers part of the visible area of the spectral region. , The Sb 2 S 3 nanoflower rigid photodetector prepared by Shen et al displayed a photocurrent-to-dark current ratio of roughly 38 at a bias voltage of 1 V . Sb 2 S 3 nanowall arrays (NWAs) were synthesized on the surface of FTO substrates by Chao et al The photodetectors based on NWAs have linear photocurrent properties, great stability, good repeatability, and an 8.6 dB linear dynamic range .…”