Depletion corrections in variable temperature Hall measurements

Abstract

Influence of Fe segregation at grain boundaries on the magnetoresistance of Sr2Fe1+δMoO6 polycrystals J. Appl. Phys. 112, 073925 (2012) Angular-dependences of giant in-plane and interlayer magnetoresistances in Bi2Te3 bulk single crystals Appl. Phys. Lett. 101, 152107 (2012) Hall effect measurements on InAs nanowires Appl. Phys. Lett. 101, 152106 (2012) Magnetic field-dependent effective microwave properties of microwire-epoxy compositesThe decrease in the measured Hall free-electron concentration with decreasing temperature near 300 K is often observed for thin high-purity GaAs layers. This has previously been interpreted as electron freezeout on deep donor sites. However, it can be quantitatively described by the decrease in carrier concentration per unit area associated with increasing surface and interface depletion region thicknesses. It is shown that when these depletion regions are included in the analysis of the Hall-effect data, the measured free-electron freezeout behavior can be accurately described by a simple shallow donor. If necessary, a deep donor may be included in the modeling. The results agree with the observed temperature variation of the capacitance-voltage (C-V) profiling data.

Evidence for dislocation-related amphoteric behaviour of Si dopant in high-mobility InSb thin films

“…(since the latter basically determines the sheet carrier density). Although correction models, based on the calculation of the depletion region thickness, have been available for GaAs for some time [12], estimates for InSb do not seem to have been published, so figure 2 is included here to show the relationship between real and apparent doping levels for 100 nm thick InSb films, as used here; the curve for 50 nm thick films is also shown for comparison. As expected, the correction is greater for thinner and more lightly doped layers.…”