Depletion-mode TFT made of low-temperature poly-Si

Son, Yong Duck; Yang, Kyung Dong; Bae, Byung Seong; Jang, Jin; Hong, MunPyo; Kim, Sung Jin

doi:10.1109/ted.2006.872359

Cited by 5 publications

(4 citation statements)

References 9 publications

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“…The proposed ripple counter shows good robustness and high performance. Compared to some similar works which have been reported, our design has better raise and fall time and can operate at higher frequency [17].…”

Section: Introductionmentioning

confidence: 81%

A high performance 3-bit ripple counter based on organic TFTs

Tang

et al. 2020

Semicond. Sci. Technol.

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We propose a high performance 3-bit negative edge-triggered ripple counter based on organic thin film transistors (OTFTs). All the logic gate circuits used in this work are inverters and NAND circuits based on OTFTs with large zero-V GS load. A clock signal with the voltage range of 0-30 V and a frequency of 12.5 kHz is used for the ripple counter as a clock input. A high output level of ∼27.4 V and a low output level of ∼4 or 5 V are measured at the 2nd and 3rd stages' output node of the ripple counter. Their frequencies are one quarter and one eighth of the input signal's frequency. The output signal of the proposed ripple counter changes when its input signal falls to low level from high.

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Section: Introductionmentioning

confidence: 81%

A high performance 3-bit ripple counter based on organic TFTs

Tang

et al. 2020

Semicond. Sci. Technol.

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“…The fabricated devices, n-channel a-SiGe:H TFT with W/L = 130 μm/55 μm resulted with a subtreshold slope of 0.9 V/DEC and a threshold voltage (V T ) approximately of 2 V. The values here reported are better than those obtained on polysilicon TFTs processed at considerable higher temperatures. Y. D. Son et al [5], reported a V T of 18V and a subthreshold slope of 1,1 V/DEC. Even complex TFTs fabrication processes like those using metal-induced crystallization [6], do not reduce the V T or improves the subthreshold slope.…”

Section: = κ ε a / D (1)mentioning

confidence: 98%

Spin-On Glass as Low-Temperature Gate Insulator for Thin-Film Transistors

Dominguez

Rosales-Quintero

Torres‐Jácome

et al. 2010

2010 IEEE Electronics, Robotics and Automotive Mechanics Conference

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In this work, we report the characterization of Spin-On Glass (SOG) as low temperature gate insulator. The SOG film was deposited at a temperature of 200°C, which is compatible to use on flexible substrates. The optical and electrical characterization showed that the refractive index and dielectric constant are very close to those of thermally grown SiO 2 . We demonstrated the use of SOG as gate insulator, fabricating and characterizing a-SiGe:H TFTs. Index Terms-Inverted staggered (IS), spin-on-glass (SOG), thin-film transistor (TFT).

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“…Then, the drain current drops significantly, and thus, the TFT becomes OFF-state. [16] In this Letter, low-voltage depletion-mode ITO TFTs gated by high-𝑘 amorphous Ba 0.4 Sr 0.6 TiO 3 gate dielectric are reported. The threshold voltage, field effect mobility, current on/off ratio and subthreshold swing are estimated to be −3.7 V, 3.2 cm 2 /Vs, 1.4 × 10 4 and 0.5 V/decade, respectively.…”

mentioning

confidence: 95%

Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba _0.4 Sr _0.6 TiO ₃ Dielectric

Wang

Dou

et al. 2010

Chinese Phys. Lett.

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We report on the fabrication and characterization of low-voltage indium-tin-oxide (ITO) thin-film transistors (TFTs) gated by Ba0.4Sr0.6TiO3 (BST) gate dielectric deposited at room temperature. The 400-nm-thick BST film shows a low leakage current density of 6 × 10 −8 A/cm 2 and a high specific capacitance of 83 nF/cm 2 (corresponding 𝜀𝑟 = 37). The ITO TFTs gated by such BST dielectric operate in a depletion mode with an operation voltage of 5.0 V. The device exhibits a threshold voltage of −3.7 V, a subthreshold swing of 0.5 V/decade, a field effect mobility of 3.2 cm 2 /Vs and a current on/off ratio of 1.4 × 10 4 .

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Depletion-mode TFT made of low-temperature poly-Si

Cited by 5 publications

References 9 publications

A high performance 3-bit ripple counter based on organic TFTs

A high performance 3-bit ripple counter based on organic TFTs

Spin-On Glass as Low-Temperature Gate Insulator for Thin-Film Transistors

Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba _0.4 Sr _0.6 TiO ₃ Dielectric

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Depletion-mode TFT made of low-temperature poly-Si

Cited by 5 publications

References 9 publications

A high performance 3-bit ripple counter based on organic TFTs

A high performance 3-bit ripple counter based on organic TFTs

Spin-On Glass as Low-Temperature Gate Insulator for Thin-Film Transistors

Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba 0.4 Sr 0.6 TiO 3 Dielectric

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Product

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About

Low-Voltage Depletion-Mode Indium-Tin-Oxide Thin-Film Transistors Gated by Ba _0.4 Sr _0.6 TiO ₃ Dielectric