Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature Appl.The arbitrary surface structuring of amorphous silicon ͑a-Si͒ films was performed by applying the Fourier-transform ͑FT͒ method to the femtosecond-laser-induced crystallization. In order to realize the arbitrary structuring, the logo q-Psi was produced in the a-Si film by the FT of a computer-generated hologram. The crystallization of a-Si was performed using the near-infrared femtosecond-laser pulses. By micro-Raman spectroscopy, scanning-electron microscopy, and transmission-electron microscopy, it was found that the femtosecond-laser pulses induced a localized phase transformation from the amorphous to the crystalline phase, and the spatially selected crystallization of the a-Si was responsible for the formation of the two-dimensional pattern.

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We studied the location control of a giant grain of polycrystalline silicon produced by Ni-mediated crystallization of amorphous silicon (a-Si) using a cap layer. An organic lens made of acryl was used for the focusing of light for the seed formation and subsequent crystallization. A single grain 62μm in diameter was made using an 80-μm-square SiNx cap layer on the a-Si. The position of a thin-film transistor (TFT) on a grain can be controlled, so that a single grain TFT can be fabricated at a predetermined position without use of the laser annealing technique.

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A novel LTPS method called MICC (metal-induced crystallization using a cap) is introduced. The role of cap layer on a-Si is the control of the nickel concentration for inducing crystallization as well as the passivation of the surface during thermal process for crystallization. Circular grain growth can be seen, due to lateral grain growth from a seed. Polycrystalline silicon with large grain and smooth surface can be achieved by MICC. We fabricated a AMLCD with high aperture ratio of 80 % using silicon-based spin-on low-K dielectrics as a planarization layer.