Deposition and Characterization of Undoped and Boron and Phosphorus Doped (Si[sub x]Ge[sub 1−x]O[sub 2]) Glass Films

Abstract

Glass films of undoped and boron and phosphorus doped GeO 2 -SiO 2 glass films were prepared by plasma enhanced chemical vapor deposition using germane, silane, phosphine, diborane, and oxygen as precursor gas sources with argon as a carrier gas. Film synthesis was carried out at 200ЊC using a dual-coil, inductively coupled plasma system. The presence of silane was not necessary to catalyze the decomposition of germane in the plasma environment as required in a strictly thermal environment. The index of refraction of undoped films changes linearly with SiO 2 composition, and deposition rate was nearly constant across all film compositions. Oxide film composition was determined using energy dispersive X-ray spectroscopy and Auger energy spectroscopy. For undoped films, solid-phase SiO 2 composition varied linearly with silane gas-phase composition. For doped compositions, phosphorus mole fraction in the solid phase was up to a factor of two greater than that present in the gas phase. In contrast to this, the quantity of boron incorporated into the solid phase was a factor of five to six less than present in the gas phase. When both dopants were present in the gas phase, the amount of each incorporated into the solid phase was similar to that in the gas phase. Figure 1. PECVD cross-flow deposition apparatus.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 132.174.255.116 Downloaded on 2015-03-09 to IP ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 132.174.255.116 Downloaded on 2015-03-09 to IP

Planarization Processes and Applications III. As-Deposited and Annealed Film Properties

“…Doped films.-Germanosilicate glasses doped with phosphorus and/or boron with the compositions shown in Table I were prepared by the PECVD technique mentioned earlier. 14 The counting unit in the table for boron in the gas phase was monoborane (BH 3 ) rather than the actual diborane (B 2 H 6 ) species, so that the amount of boron and phosphorus (introduced as PH 3 species) were the same at a given flow rate. Additionally, undoped control samples were included at both the 20 and 50 mol % SiO 2 solid-phase compositions.…”

“…Sample preparation.-Germanosilicate films were deposited on single-crystal silicon substrates by the plasma-enhanced chemical vapor deposition (PECVD) method reported elsewhere. 14 Following deposition, reflow experiments were conducted in either argon, steam, forming gas, or a two-step process with argon and either steam or forming gas. These experiments were all conducted at atmospheric pressure.…”

Gas-Phase Ion Chemistry of GeH4/B2H6 Mixtures

“…2,3 In these optics, pure and doped SiGe alloys are widely studied and several articles and patents have recently appeared concerning these promising materials as well as their oxides, the latter being glasses with various dielectric applications. [4][5][6][7][8][9][10][11][12][13][14][15] In particular, studies have been performed on the resistivity of SiGe alloys doped with boron or phosphorus 16 and the structural and electric properties of B-doped SiGe alloy films obtained by low frequency plasma-enhanced chemical vapor desposition (LF PECVD) were recently investigated. 17 Moreover, a non-selective epitaxial growth method was proposed for manufacturing a semiconductor device by using silane, hydrogen, diborane and germane as source gases.…”