Deposition of device quality, low <i>H</i> content amorphous silicon

Mahan, A. H.; Carapella, J. J.; Nelson, B. P.; Crandall, Richard S.; Balberg, I.

doi:10.1063/1.348897

Cited by 490 publications

(208 citation statements)

References 25 publications

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“…The lower hydrogen content is a striking similarity with HW-CVD material [61]. Mahan et al [60] showed differences in opto-electronic properties compared with RF-PECVD and reported better structural order of the HW-CVD material. They suggested high substrate temperatures, deposition in a high flux of atomic hydrogen, and absence of energetic particle bombardment as possible reasons for the improved structure.…”

Section: Measurementsmentioning

confidence: 83%

Integration of Expanding Thermal Plasma deposited Hydrogenated Amorphous Silicon in Solar Cells

et al. 2002

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A cascaded arc expanding thermal plasma is used to deposit intrinsic hydrogenated amorphous silicon at growth rates between 0.2 and 3 nm/s. Incorporation into a single junction p-i-n solar cell resulted in an initial efficiency of 6.7%, whereas all the optical and initial electrical properties of the individual layers are comparable with RF-PECVD deposited films. In this cell the intrinsic layer was deposited at 0.85 nm/s and at a deposition temperature of 250°C, which is the temperature limit for growing the p-i-n sequence. The cell efficiency is limited by the fill factor and using a buffer layer at the p-i interface deposited with RF-PECVD at low growth rate can increase this. The increase in fill factor is a result of a lower initial defect density near the p-i interface then obtained with the expanding thermal plasma, resulting in better charge carrier collection. To use larger growth rates, while maintaining the material properties, higher deposition temperatures are required. Higher deposition temperatures result in a smaller optical bandgap for the intrinsic layer and deterioration of the p-type layer, resulting in a lower opencircuit voltage. First results on applying a buffer layer will also be presented.

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Section: Measurementsmentioning

confidence: 83%

Integration of Expanding Thermal Plasma deposited Hydrogenated Amorphous Silicon in Solar Cells

et al. 2002

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“…Schematic diagram of Cat-CVD and gas-phase dynamics [21]. plasma decomposition in conventional plasma enhanced CVD (PECVD) [23]. As shown in Fig.…”

Section: Protection Of Molecular Devices By Cat-cvd Filmsmentioning

confidence: 99%

A new approach to molecular devices using SAMs, LSMCD and Cat-CVD

Nishikawa

Mitani

2003

Science and Technology of Advanced Materials

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This paper proposes a new technology for the fabrication of molecular devices using nanotechnology based on liquid and surface sciences recently developed, such as the direct patterning of solid surfaces using the difference of hydrophobic and hydrophilic properties of selfassembled mono-layers and self-assembly films of metal nanoparticles, the fine fabrication of films by the method of Liquid Source Misted Chemical Deposition, and the Langmuir-Blodgett self-assembly films. In these liquid-based technologies, various kinds of organic compounds in solutions, including biological systems, can be used as functional materials in molecular devices. In addition, it has been found that the insulating inorganic films obtained by catalytic chemical vapor deposition are quite effective in the protection of molecular devices against water and/or oxygen. We confirm, from the experimental results presented in this report, that this new approach is practically promising in future. q

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“…25 Other factors that may contribute to the stability are the lower recombination energy in the low-band gap a-SiGe:H cells 26 and the improved amorphous network structure, due to the high concentration of atomic hydrogen during the HWCVD process. 27 In conclusion, we have demonstrated a triple junction a-SiGe:H(1.37 eV)/a-SiGe:H(1.54 eV)/a-Si:H(1.86 eV) solar cell architecture that used HWCVD as the deposition method for all intrinsic absorber layers. The devices have an initial energy conversion efficiency exceeding 10% and show only limited light-induced degradation.…”

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confidence: 99%

Very thin and stable thin-film silicon alloy triple junction solar cells by hot wire chemical vapor deposition

Veldhuizen

Schropp

2016

Applied Physics Letters

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We present a silicon-based triple junction solar cell that requires a deposition time of less than 15 min for all photoactive layers. As a low-bandgap material, we used thin layers of hydrogenated amorphous silicon germanium with lower band gap than commonly used, which is possible due to the application of hot wire chemical vapor deposition. The triple junction cell shows an initial energy conversion efficiency exceeding 10%, and with a relative performance stability within 6%, the cell shows a high tolerance to light-induced degradation. With these results, we help to demonstrate that hot wire chemical vapor deposition is a viable deposition method for the fabrication of low-cost solar cells.

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Deposition of device quality, low H content amorphous silicon

Cited by 490 publications

References 25 publications

Integration of Expanding Thermal Plasma deposited Hydrogenated Amorphous Silicon in Solar Cells

Integration of Expanding Thermal Plasma deposited Hydrogenated Amorphous Silicon in Solar Cells

A new approach to molecular devices using SAMs, LSMCD and Cat-CVD

Very thin and stable thin-film silicon alloy triple junction solar cells by hot wire chemical vapor deposition

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