Deposition of silicon oxynitride at room temperature by Inductively Coupled Plasma-CVD

Zambom, Luís da Silva; Verdonck, Patrick

doi:10.1016/j.tsf.2005.12.186

Cited by 10 publications

(4 citation statements)

References 10 publications

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“…1. All the spectra showed strong absorbance bands at around 840, 1170, 2150, and 3350 cm − 1 originated from Si-N bonding [6], Si-O bonding [7], Si-H bonding, and the bonding from -OH and N-H [8], respectively. The Si-N absorbance peak at the wave number around 840 cm − 1 was shifted to the high wave number (to 904 cm − 1 ) with increasing the ratio R. It is reported that Si-N band is shifted depending on the relative concentration of Si-H (2100 -2200 cm − 1 ) and N-H (around 3350 cm − 1 ) in the deposited films [9].…”

Section: Resultsmentioning

confidence: 99%

Properties of SixNy thin film deposited by plasma enhanced chemical vapor deposition at low temperature using SiH4/NH3/Ar as diffusion barrier film

Pham¹,

Lee²,

Kim³

et al. 2008

Surface and Coatings Technology

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Section: Resultsmentioning

confidence: 99%

Properties of SixNy thin film deposited by plasma enhanced chemical vapor deposition at low temperature using SiH4/NH3/Ar as diffusion barrier film

Pham¹,

Lee²,

Kim³

et al. 2008

Surface and Coatings Technology

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“…FTIR spectra measured to estimate the chemical bonding states for the Si x N y thin films deposited as a function of the different film thickness. All the spectra showed strong absorbance bands at around 840 cm − 1 and 2150 cm − 1 , originated from Si-N bonding and Si-H bonding (6), (7) , respectively. The Si-N absorbance peak at the wave number around 840 cm − 1 was increased with the increase of the thickness of Si x N y film.…”

Section: Attpsm and Bim Photomask Patterning And Etchingmentioning

confidence: 99%

Green binary and phase shifting mask

Shy

Hong

et al. 2009

SPIE Proceedings

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Si x N y /Ni thin film green mask blanks were developed , and are now going to be used to replace general chromium film used for binary mask as well as to replace molydium silicide embedded material for AttPSM for I-line (365 nm), KrF (248 nm), ArF (193 nm) and Contact/Proximity lithography. A bilayer structure of a 1 nm thick opaque, conductive nickel layer and a Si x N y layer is proposed for binary and phase-shifting mask. With the good controlling of plasma CVD of Si x N y under silane (50 sccm), ammonia (5 sccm) and nitrogen (100 sccm), the pressure is 250 mTorr. and RF frequency 13.56 MHz and power 50 W. Si x N y has enough deposition latitude to meet the requirements as an embedded layer for required phase shift 180 degree, and the T% in 193, 248 and 365 nm can be adjusted between 2 % to 20 % for binary and phase shifting mask usage. Ni can be deposited by E-gun, its sheet resistance Rs is less than 1.435 kΩ/square. Jeol ebeam system and I-line stepper are used to evaluate these thin film green mask blanks, feature size less than 200 nm half pitch pattern and 0.558 μm pitch contact hole can be printed. Transmission spectrums of various thickness of Si x N y film are inspected by using UV spectrometer and FTIR. Optical constants of the Si x N y film are measured by n & k meter and surface roughness is inspected by using Atomic Force Microscope (AFM).

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“…High-density inductively-coupled plasma enhanced chemical vapor deposition (HD ICPECVD) reactors are used nowadays for a variety of low-temperature materials processing applications [1][2][3], including deposition of thin dielectric and semiconductor films, film etching and surface and materials modification. ICP reactors utilizing mixtures of silane with argon or hydrogen are used for deposition of amorphous or polycrystalline silicon.…”

Section: Introductionmentioning

confidence: 99%

Chemical modeling of a high-density inductively-coupled plasma reactor containing silane

Kovalgin

Boogaard

Brunets

et al. 2007

Surface and Coatings Technology

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Deposition of silicon oxynitride at room temperature by Inductively Coupled Plasma-CVD

Cited by 10 publications

References 10 publications

Properties of SixNy thin film deposited by plasma enhanced chemical vapor deposition at low temperature using SiH4/NH3/Ar as diffusion barrier film

Properties of SixNy thin film deposited by plasma enhanced chemical vapor deposition at low temperature using SiH4/NH3/Ar as diffusion barrier film

Green binary and phase shifting mask

Chemical modeling of a high-density inductively-coupled plasma reactor containing silane

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