Deposition of thin BST films in a multi-wafer planetary reactor

Abstract

We report on the performance of a planetary multi-wafer reactor offering extremely high throughput due to the batch mode processing and a low cost of ownership. This reactor is combined with a liquid delivery system which mixes the liquid precursors from three different sources: 0.35 molar solutions of Ba(thd)* and Sr(thd), and a 0.4 molar solution of Ti(0-iPr),(thd),. The composition and microstructure of the films were routinely investigated by X-ray diffraction and X-ray fluorescence analysis. As a direct consequence of the reactor design we obtain high efficiencies for the precursor incorporation in the order of 40%. Furthermore, we obtain a high uniformity of the films over 6 inch wafers. Details of the chemistry and microstructure were investigated by secondary neutral mass spectroscopy and scanning electron microscopy. The electrical film properties are discussed in relation to microstmctural properties.

Pyro, Ferro and Dielectric Properties of Ba0.8Sr0.2TiO3 Films Deposited by Sol-Gel on Platinized Silicon Substrates

“…We consider that ε BST , ε i and t i are constant so when t BST increases, ε meas also increases. For the two films the values of ε measured are in the order of magnitude of BST films deposited with other methods such as MOCVD [4] and sputtering [5]. It can be noted that for the two samples, ε decreases in the entire frequency range.…”

Thin Films of ZrO2 for High‐k Applications Employing Engineered Alkoxide‐ and Amide‐Based MOCVD Precursors

“…Being characterized by a central gas inlet makes this reactor a radial flow system [11]. Growth temperatures refer to the temperature measured at the graphite susceptor, which may be 20 to 50°C higher than the surface temperature of the substrates.…”

“…[11] For the comparative study we used 0.05 molar solutions of the above-mentioned precursors. The precursor solution was injected by a TRIJET system with a typical pulse length of 0.8 ms (corresponding to 5 lL of precursor solution) and with pulse intervals of 0.32 s. This corresponds to an average precursor flow rate of ∼ 1 mL min -1 .…”

MOCVD of ZrO2 and HfO2 Thin Films from Modified Monomeric Precursors

“…The reactor is characterized by a central gas inlet, which makes the reactor a radial flow system [34]. Growth temperatures refer to the temperature measured at the graphite susceptor, which may be 20°C to 50°C higher than the surface temperature of the substrates.…”