Deposition of thin rhodium films by plasma-enhanced chemical vapor deposition

Etspüler, A.; Suhr, Harald

doi:10.1007/bf00618901

Cited by 30 publications

(7 citation statements)

References 12 publications

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“…80) Plasma enhanced CVD using the (acac)Rh(CO) 2 complex and the assistance of hydrogen resulted in rhodium films of acceptable purity (98 mass%Rh), although films thicker than 30-50 nm showed wrinkles and microcracks. 81) Two additional carbonyl complexes (rhodium carbonyl tetramethyl heptanedionate, (thd)Rh(CO) 2 , and rhodium carbonyl hexafluoroacetylacetonate, (hfac)Rh(CO) 2 ), were employed for the deposition of rhodium stripes by laser CVD. 80) Rhodium strips deposited from the (thd)Rh(CO) 2 complex showed again significant carbon contamination.…”

Section: Carbonyl Rhodium Complexesmentioning

confidence: 99%

Chemical Vapor Deposition of Iridium, Platinum, Rhodium and Palladium

2003

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This article reviews the progress in the chemical vapor deposition of iridium, platinum, rhodium and palladium metals. In the course of the last decade the number of articles on CVD of this group of metals has increased significantly. A wide variety of metal organic complexes have been investigated as potential precursors and appreciable results have been obtained. However, some aspects such as low deposition rates and impurity incorporation into the films still remain as concerns in this area. The representative results on CVD of these metals are presented according to the type of metal organic complexes used.

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Section: Carbonyl Rhodium Complexesmentioning

confidence: 99%

Chemical Vapor Deposition of Iridium, Platinum, Rhodium and Palladium

2003

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“…Crosslink concentrations in the films depend upon the relative reactivities of these groups, which decrease in the order [Si-CH 2 -Si] > [Si-Si] > [Si-CH 2 -CH 2 -Si] [243]. Good quality films of Cu [245], Rh [246], and Ag [247] have been produced in this way, but important additional flexibility lies in its capability of providing alloy films such as Fe/Co and Au/Pt/Pd [248]. Good quality films of Cu [245], Rh [246], and Ag [247] have been produced in this way, but important additional flexibility lies in its capability of providing alloy films such as Fe/Co and Au/Pt/Pd [248].…”

Section: A the Structure Of Plasma Polymer Filmsmentioning

confidence: 99%

Plasma-Polymerized Organosilicones and Organometallics

Wróbel

1990

Plasma Deposition, Treatment, and Etching of Polymers

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“…Rhodium has been much less extensively studied (2,10). Rhodium films are used in mirror optics, catalysis, and wear protection but, while rhodium has excellent electrical properties and corrosion resistance, its high cost has so far limited its application in microelectronics (11).…”

Section: Xntroductionmentioning

confidence: 99%

New precursors for organometallic chemical vapor deposition of rhodium

Kumar¹,

Puddephatt²

1991

Can. J. Chem.

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R. KUMAR and R. J. PUDDEPHATT. Can. J. Chem. 69, 108 (1991).The q-cyclopentadienyl (Cp) and q-ally1 (C3H5) complexes [RhCp(C0)2], [RhCp(cod)] where cod = 1,5-cyclooctadiene, [Rh(q-C3H5)(CO),], and [ R h (~l -c~H~)~] have been shown to be useful precursors for the chemical vapour deposition (CVD) of rhodium films. The rhodium films contain carbon impurities but these can be greatly reduced if CVD is carried out in the presence of hydrogen. The films adhere well to a silicon substrate. Xntroduction There has been much recent interest in the formation of thin films of metals using chemical vapour deposition, CVD (1-3). These films have applications in microelectronics, optical devices, wear protection, and catalysis (4). Advantages of CVD include its ease of use, mild conditions of formation, and high performance of the films. Challenges for chemists include the design and synthesis of volatile precursors which decompose to the desired materials in pure form and under mild thermal or photochemical conditions as required for specific applications, and the determination of the mechanisms of CVD to enable the development of a rational approach to precursor design.Most recent research has been focussed on CVD of gold, palladium, and platinum, noble metals most commonly used in microelectronics (5-9). Rhodium has been much less extensively studied (2, 10). Rhodium films are used in mirror optics, catalysis, and wear protection but, while rhodium has excellent electrical properties and corrosion resistance, its high cost has so far limited its application in microelectronics (11). This paper surveys, some volatile organorhodium complexes, and reports on a study of thermal CVD of rhodium films from these compounds. Other researchers have reported CVD of rhodium using the precursors [Rh2 ( Results and discussionIn this work, the new precursors used were the -q-cyclopentadienyl derivatives [RhCp(cod)] , Cp = p-C5H5, cod = 1 3 -cyclooctadiene, and [RhCp(CO)2] and the q-ally1 derivatives [Rh(q-C3H5)(C0)2] and [Rh(q-C3H5)3]. All were prepared by known procedures (12-15). For reference, some CVD experiments were also carried out with the known precursor [Rh2 t F-C~)Z(CO),] (2). Formation and characterization of rhodium jlmsIn a typical reaction, CVD was carried out in a vertical reactor operating at 10-2-10-3 Torr. The substrate was a silicon wafer, which was heated to 130-270°C. Under these conditions, highly reflective rhodium films were formed and the film thickness typically grew at a rate of -2 pm/h. The films were analyzed by XPS and some typical data are given in Table 1.The rhodium films are rapidly contaminated by exposure to the atmosphere and, in all cases, the films were cleaned before analysis by argon sputtering for 30 s. Even so, the films consistently contained much carbon and oxygen impurities. These impurities were greatly reduced when the CVD was carried out using hydrogen carrier gas (Table 1). For example, using only ~o r r Hz as carrier gas and [Rh(p-C3H5)(CO)2] as precursor, the rhodium content increased...

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Deposition of thin rhodium films by plasma-enhanced chemical vapor deposition

Cited by 30 publications

References 12 publications

Chemical Vapor Deposition of Iridium, Platinum, Rhodium and Palladium

Chemical Vapor Deposition of Iridium, Platinum, Rhodium and Palladium

Plasma-Polymerized Organosilicones and Organometallics

New precursors for organometallic chemical vapor deposition of rhodium

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