Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero junction diode

Yang, Seong Uk; Choi, Sang-Jin; Lee, Jongtaek; Kim, Jeehwan; Jung, Woo Shik; Yu, Hyun Yong; Roh, Yonghan; Park, Jin‐Hong

doi:10.1016/j.jallcom.2013.02.012

Cited by 4 publications

(3 citation statements)

References 8 publications

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“…Yang et al. [ 30,31 ] reported that the defects at IGZO/GaAs heterostructure degrade the rectifying behavior of the heterostructure due to the generation current by traps. Therefore, the integration of IGZO layer with GaAs made the trap‐assisted carrier transport become dominant.…”

Section: Resultsmentioning

confidence: 99%

“…IGZO is a wide bandgap oxide semiconductor ( E g = ≈3.3 eV) which exhibits outstanding UV absorption, high electron mobility, and easy fabrication process by a room‐temperature sputter method. [ 27–29 ] Due to these favorable properties, IGZO/GaAs heterostructures have been primarily investigated as switching devices, [ 30,31 ] but IGZO/GaAs as photodetectors has not been studied yet because of the lack of adequate integration scheme.…”

Section: Introductionmentioning

confidence: 99%

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Distinct UV–Visible Responsivity Enhancement of GaAs Photodetectors via Monolithic Integration of Antireflective Nanopillar Structure and UV Absorbing IGZO Layer

Liao

Zheng

Shin

et al. 2022

Advanced Optical Materials

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characteristic with a bandgap energy of ≈1.4 eV. The bandgap energy also enables its usage in visible photodetection. [7,8] In addition, GaAs has exhibited its potentials in the ultraviolet (UV) photodetection due to the high absorption coefficient. [9,10] Nowadays, broadband UV-visible photodetectors exhibit outstanding application potentials in areas such as environment, energy, and imaging. [11] Among various semiconductor materials, GaAs is one of the best candidates for broadband UV-visible photodetection considering the suitable bandgap for visible light detection and high absorption coefficient in UV range.However, two challenges still exist in improving the UV-visible responsivity of GaAs photodetectors: 1) surface reflection loss of incident light and 2) shallow penetration depth of GaAs in UV range. The former issue can be effectively ameliorated by employing various antireflection schemes. Among them, surface texturing such as textured GaAs, [12,13] GaAs nanocones [14,15] and porous GaAs [16][17][18][19] has shown a facile and effective way to achieve a broadband antireflection, compared with a multilayered antireflection coating which requires a precise control of refractive index and thickness of individual layer. [20] Although some of these works on surface texturing demonstrated low UV-visible reflection below 5%, none of them have systematically studied an implication of the textured antireflection layer in GaAs photodetectors and their performance enhancement in a broadband UV-visible range. For example, Namiki et al. [21] fabricated GaAs nanogrooves which exhibited distinctly reduced reflectance from 400 to 1000 nm wavelength. However, this photodetector was only characterized under 532 nm visible illumination and its performance enhancement in a broadband UV-visible range was not reported. In fact, it is challenging to realize the UV performance enhancement in GaAs photodetectors due to the latter issue, i.e., the shallow penetration depth of UV light in GaAs which leads to significant loss of photocarriers by recombination. [22] The surface recombination is expected to be more severe in UV range for antireflective structures due to potential formation of more surface states as traps and recombination centers which are introduced by larger surface areas and fabrication methods such as etching. [12,23] On the other hand, Broadband ultraviolet-visible photodetection has been attracting growing research interests in fields of environment, energy, and imaging. Considering the suitable bandgap and high absorption coefficient, GaAs is one of the best candidates for ultraviolet-visible photodetection. In this work, a monolithic integration strategy of nanopillar antireflective structure and InGaZnO (IGZO) ultraviolet absorbing layer is proposed to enhance the ultraviolet-visible spectral responsivity of GaAs photodetectors. Both nanopillar topography and IGZO layer exhibit antireflective performance, leading to the enhancement of the light absorption and responsivity of the photodetectors. By the comb...

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Distinct UV–Visible Responsivity Enhancement of GaAs Photodetectors via Monolithic Integration of Antireflective Nanopillar Structure and UV Absorbing IGZO Layer

Liao

Zheng

Shin

et al. 2022

Advanced Optical Materials

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show abstract

“…Transparent amorphous indium-gallium-zinc-oxide (α-IGZO) thin film transistors (TFTs) are being considered as a replacement for conventional TFTs based on hydrogenated amorphous silicon to be used in optoelectronic device, flat panel displays, like active matrix displays, organic light-emitting diodes, and other optoelectronic device applications [1][2][3]. Advantages of α-IGZO TFTs include high electron mobility, good uniformity, high transparency in visible light, and moderate processing temperature [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Substrate temperature dependent structural, optical and electrical properties of amorphous InGaZnO thin films

Chen

Gao

et al. 2015

Journal of Alloys and Compounds

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Modification of band offsets of InGaZnO4/Si heterojunction through nitrogenation treatment

Chen

et al. 2015

Journal of Alloys and Compounds

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Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero junction diode

Cited by 4 publications

References 8 publications

Distinct UV–Visible Responsivity Enhancement of GaAs Photodetectors via Monolithic Integration of Antireflective Nanopillar Structure and UV Absorbing IGZO Layer

Distinct UV–Visible Responsivity Enhancement of GaAs Photodetectors via Monolithic Integration of Antireflective Nanopillar Structure and UV Absorbing IGZO Layer

Substrate temperature dependent structural, optical and electrical properties of amorphous InGaZnO thin films

Modification of band offsets of InGaZnO4/Si heterojunction through nitrogenation treatment

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