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In this letter, we demonstrate an n-indium-galliumzinc-oxide (IGZO)/i-germanium (Ge) heterojunction diode with an ultrashallow junction depth of ∼37 nm. X-ray diffraction, atomic force microscopy, and secondary ion mass spectrometry analyses are performed to precisely investigate the n-IGZO and n-IGZO/i-Ge junctions. When the junction diodes are annealed at between 400 • C and 600 • C, a very high ON-current density (180−320 A/cm 2 ), which is comparable to that of a Ti/i-Ge reference junction, is obtained. In particular, after the 600 • C anneal, a fairly high ON/OFF-current ratio (7 × 10 2 ) is also observed.

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spectra, optical and zeta-potential analyses of CdSe/ZnS core-shell Qdots, DNA base sequences of DX, 5 HR and 8 HT structures, adsorption ratio calculation, and roughness analysis of bare/OTS-coated p-SiO 2 substrates. See

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