Derk Haank - Chef von Springer Science + Business Media

Abstract

Mit über 7.000 Mitarbeitern weltweit, einer eBook Collection von über 120.000 Titeln und ca. 8.000 neuen Buchtiteln allein im Jahr 2012 ist Springer Science+Business Media einer der international führenden Wissenschaftsverlage. Das Credo ist, hochwertige Inhalte in innovativen Produktformen und Dienstleistungen einem anspruchsvollen Publikum anzubieten. Springer – ein Verlag, der den Wandel vom traditionellen Buchverlag zum modernen Informationsdienstleister geschafft hat?

Ultra-High Sensitive NO2 Gas Sensor Based on Tunable Polarity Transport in CVD-WS2/IGZO p-N Heterojunction

“…In general, the band shape and barrier height of the heterojunction can be effectively modulated by applying an external gate voltage on the back-gate silicon electrode. − As shown in Figure a,b, the N-IGZO has a large number of electrons, the electron drifts from IGZO to WS 2 to overcome the WS 2 /IGZO barrier under a constant positive V ds . With a negative V gs , the electron concentrations of IGZO near the SiO 2 dielectric substrate decrease, which induces the E c of IGZO decrease according to the equation of electron concentrations, n 0 = N c × exp­(−( E c – E F )/ k 0 T ), where N c is the effective density of states of the conduction band, k 0 is the Boltzman constant, T is the temperature, and results in the upward band bending between the SiO 2 and IGZO films. On the contrary, after applying a positive V gs , the electron concentration in IGZO increase near the SiO 2 substrate and shift the Fermi level downward, forming a downward band bending (see Figure c,d).…”

Intelligent matter endows reconfigurable temperature and humidity sensations for in-sensor computing

“…Additionally, a higher temperature means that more thermal energy creates more electron-hole pairs and a higher density of charge carriers. 29 Therefore, the conductance increased with the increased temperature when the device is at the HRS. The influence of temperature on the Mo/CIGSe/Mo device was investigated as shown in Fig.…”

“…51 Ideally, at 0 K, semiconductors cannot conduct electrons or their conductivity is zero, because all charge carriers are frozen in the valence band and below the Fermi level. 29 With the increase in temperature, electrons in the valence band absorb thermal energy and jump to the conduction band, generating electron-hole pairs that act as charge carriers, as shown in Fig. 3a (right).…”

“…In comparison, the metal shows a negative temperature coefficient of conductance, which means the conductance of the LRS decreases with increased temperature. 29 Besides, the humidity level affects electrochemical redox reactions during the SET process, which will change the conductivity of the metallic filament. The conductance at the LRS thus is sensitive to humidity.…”

Role of Dopants in Organic and Halide Perovskite Energy Conversion Devices

“…The addition of specific dopants creates defect states in the semiconductor gap offering control over the carrier density (holes or electrons depending on doping type) and, thus, its electrical and optical properties . Depending on which type of carrier is found in excess, the semiconductor is referred as p-type (hole majority) or n-type (electron excess) . In solar cells, doping can influence carrier diffusion length, open circuit voltage, interfacial energy barrier, contact resistance, and charge recombination rate, all of which govern the device performance .…”