Design and Analysis of Active Metamaterial Modulated by RF Power Level

Abstract

In this paper, a radio frequency (RF)-power-modulated active metamaterial loaded with a nonlinear Schottky diode is presented. Its operating mode is a function of the incident power level. It is switched by a change in the operating state (i.e., on/off) of the Schottky diode, which is directly triggered by a change in the incident power level. For instance, when a low-power RF radiation is incident on the proposed metamaterial, the Schottky diode is turned off, and the metamaterial passes a 2 GHz signal in the pass-band mode. By contrast, when a high RF power is incident, the diode is turned on, and the metamaterial reflects all frequencies in the reflection mode. The proposed active metamaterial was analysed by performing numerical simulations for both low- and high-power modes, and the proposed concept was successfully demonstrated by circuit analysis, full-wave simulation, and experimental results.

H-shaped modifiers loaded mirror symmetric resonator based double negative metamaterial for multi-band wireless communications

“…On the other hand, Refs. 36 , 48 , 50 , 52 have larger dimensions than the proposed MTM. Moreover, the proposed MTM exhibits a higher EMR of 10.95 than the MTMs of 36 , 49 , 52 , which indicates the superiority of the proposed design in terms of compactness over those MTMs.…”

“…Refs. 36 , 48 – 51 mentioned in Table 7 used FR4 material as the substrate of the unit cell. FR4 is the lossy medium, and MTM constructing with FR4 substrate suffers from increased energy loss, especially when the frequency is over 10 GHz.…”

“…Additionally, The MTMs of Refs. 48 , 49 can exhibit resonance phenomena at a single frequency of 2 GHz and 7.435 respectively, whereas our proposed MTM can work at multiple frequency bands like the MTMs of Refs. 36 , 50 – 52 .…”

Recent Advances in Reconfigurable Metasurfaces: Principle and Applications

“…The principle of using PIN diodes and varactor diodes to design a reconfigurable metasurface is to change the parameters of equivalent circuits. Some other semiconductor devices can also achieve similar functions [ 244 , 245 , 246 ].…”

Plasma-discharge-integrated structure for microwave power limiter

“…The RADAR system technology that protects against front-door coupling can be categorized into various types such as solidstate, ferrite, and plasma types; when they operate ideally, the insertion loss must be below a speci c input power value, and the loss must be generated above a speci c input power value in order to function as a protection device. Solid-state limiters and semiconductor-based protection devices consist of P-I-N diodes, Schottky diodes, and eld effect transistor devices [23][24][25][26] . The most representative semiconductor limiter, which comprises a parallel P-I-N diode, has the advantage of having a low insertion loss value in a low-power input signal.…”