Design and analysis of double-fused 1.55-μm vertical-cavity lasers

Babic, D.I.; Piprek, Joachim; Streubel, K.; Mirin, Richard P.; Margalit, N.M.; Mars, D. E.; Bowers, John E.; Hu, Evelyn L.

doi:10.1109/3.605560

Cited by 94 publications

(32 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Refractive indices have been reported by Gehrsitz et al [33], Gini and Melchior [34], Chandra et al [35], and Henry et al [36], Lee and Lee [37] or found in www.virginiasemi.com. Temperature−dependent absorption coefficients have been given in [38][39][40][41][42][43][44][45]. Electrical and thermal parameters of structure layers at 300 K and, as an example, at 350 K are listed in Tables 1 and 3, respectively, optical ones -in Table 4, and model parameters necessary for gain calculations (found in Refs.…”

Section: Model Parametersmentioning

confidence: 99%

Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication

Piskorski¹,

Sarzała²,

Nakwaski³

2011

Opto-Electronics Review

View full text Add to dashboard Cite

Continuous-wave (CW) performance of modern 1.3-μm InAsP/InGaAsP multi-quantum-well (MQW) tunnel-junction vertical-cavity surface-emitting diode lasers (TJ-VCSELs) is investigated using our comprehensive self-consistent simulation model to suggest their optimal design for room and elevated temperatures. For increasing ambient temperatures, an increase in the VCSEL threshold current has happened to be mostly associated with the Auger recombination. Nevertheless, the InAsP/InGaAsP VCSELs have been found to exhibit encouraging thermal behaviour with the quite high value of maximal operating temperature of 350 K. It has been found that 5-μm devices seem to be the most optimal ones because they demonstrate both the room temperature (RT) threshold current equal to only 0.55 mA and maximum operating temperature equal to as much as 345 K. For these devices, the characteristic temperature T0 is equal to 92 K for 290–305 K, 51 K for 310–325 K and 29 K for 330–345 K. Therefore, the InAsP/InGaAsP VCSELs have been found to offer very promising performance both at room and elevated temperatures as sources of the carrier 1.3-μm wave in the fibre optical communication using silica fibres.

show abstract

Section: Model Parametersmentioning

confidence: 99%

Investigation of temperature characteristics of modern InAsP/InGaAsP multi-quantum-well TJ-VCSELs for optical fibre communication

Piskorski¹,

Sarzała²,

Nakwaski³

2011

Opto-Electronics Review

View full text Add to dashboard Cite

show abstract

“…1 shows schematic 1550 nm air-post VCSEL, which is used for simulation. Device parameters are modeled based on empirical data of fabricated devices [15] as shown in Fig. 1; where the VCSEL circular diameter is 12 μm, diameter of air-post is 4 μm.…”

Section: Theorymentioning

confidence: 99%

“…Present work has improved the structure of a VCSEL which was fabricated [15]. Previous work shows power and threshold current about 5 mW and 2.3 mA respectively [16].…”

Section: Introductionmentioning

confidence: 99%

Design and simulation of a high power single mode 1550nm InGaAsP VCSELs

Faez

Marjani

2011

IEICE Electron. Express

View full text Add to dashboard Cite

Abstract:In the present work, a new structure of vertical cavity surface emitting laser (VCSEL) is designed and simulated. In this structure, InGaAsP is used as the active region which is sandwiched between GaAs/AlGaAs distributed bragg mirror at the top of structure and GaAs/AlAs distributed bragg mirror at the bottom. In this work, the hole etching depth was continued down to the top of lower spacer layer while in the previous work the hole etching depth was only down to top of the upper spacer. In this way, the threshold current decrement of 76.52% and increment the power by 28% from 5 mW to 6.4 mW at bias current of 9 mA was achieved. In this paper, device characteristics such as light power versus electrical current and voltage versus current are simulated and compared with the previous work. Keywords: design, high power, InGaAsP, VCSEL Classification: Optoelectronics, Lasers and quantum electronics, Ultrafast optics, Silicon photonics, Planar lightwave circuits Amann, "Vertical-cavity surface-emitting laser diodes at 1.55 μm with large output power and high operation temperature," Electron. Lett., vol. 37, pp. 1295Lett., vol. 37, pp. -1296Lett., vol. 37, pp. , 2001 N. Nishiyama, C. Caneau, G. Guryanov, X. S. Liu, M. Hu, and C. E. Zah, "High efficiency long wavelength VCSEL on InP grown by MOCVD," Electron. Lett., vol. 39, pp. 437-439, 2003. [13] A. Karim, J. Piprek, P. Abraham, D. Lofgreen, Y.-J. Chiu, and J. ReferencesE. Bowers, "1.55-um vertical-cavity laser arrays for wavelength-division multiplexing," IEEE

show abstract

“…The calculated optical confinement factor in the p-doped layer is around 0.5%. The additional loss caused by this p-doped layer is estimated to be around 0.6 dB/cm with an absorption coefficient of 29 cm cm in p-doped GaAs at 1550 nm [9]. To verify our 2-D FDTD and Padé approximation transform program, the mode effective index dispersion of the fundamental quasi-TE mode was also analyzed by this 2-D FDTD method.…”

Section: B Optical Waveguidementioning

confidence: 99%