Design and analysis of spiral circular inductors for GaN based low noise amplifier (MMICs)

Chander, Subhash; Bansal, Kirti; Gupta, Samuder; Gupta, Mridula

doi:10.1109/icmoce.2015.7489749

Cited by 3 publications

(1 citation statement)

References 4 publications

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“…The system was calibrated to the probe tips using off-wafer line-reflect-reflect-match calibration. The measured S-parameters were then converted to Y-parameters, which were subsequently used to calculate the inductance and Q-factor of the fabricated devices [9].…”

Section: Measurement Resultsmentioning

confidence: 99%

High-Performance MMIC Inductors for GaN-on-Low-Resistivity Silicon for Microwave Applications

Eblabla

Wallis

et al. 2018

IEEE Microw. Wireless Compon. Lett.

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Abstract-Novel MMIC spiral inductors on GaN-on-lowresistivity silicon (LR-Si) substrates (σ < 40 · cm) are demonstrated with enhanced self-resonance frequency ( f SRF ) and Q-factor. The developed technology improves inductor performance by suppressing substrate coupling effects using air-bridge technology above benzocyclobutene dielectric as an interface layer on the lossy substrate. A 0.83-nH spiral inductor with peak Q-factor enhancement of 57% ( Q = 22 at 24 GHz) and maximum f SRF of 59 GHz was achieved because of the extra 5-μm elevation in air. An accurate broad-band model for the fabricated inductors has been developed and verified for further performance analysis up to 40 GHz. The proposed inductors utilize cost-effective, reliable, and MMIC-compatible technology for the realization of high-performance RF GaN-on-LR Si MMIC circuits for millimeter-wave applications.Index Terms-Benzocyclobutene (BCB), GaN-based highelectron-mobility transistors (HEMTs), high-Q Inductors, low-resistivity silicon substrates, millimeter wave.

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Section: Measurement Resultsmentioning

confidence: 99%

High-Performance MMIC Inductors for GaN-on-Low-Resistivity Silicon for Microwave Applications

Eblabla

Wallis

et al. 2018

IEEE Microw. Wireless Compon. Lett.

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Design and analysis of high performance air-bridge spiral circular inductors for GaN MMICs up to ku band

Chander

Bansal

Gupta

et al. 2017

2017 Devices for Integrated Circuit (DevIC)

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A Geometrically Scalable Lumped Model for Spiral Inductors in Radio Frequency GaN Technology on Silicon

Spataro,

Sapone,

Giuffrida

et al. 2024

Electronics

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This paper presents a lumped scalable model for spiral inductors in a radio frequency (RF) gallium nitride (GaN) technology on silicon substrate. The model has been developed by exploiting electromagnetic (EM) simulations of geometrically scaled spiral inductors. To this aim, the technology substrate, i.e., the metal back-end-of-line along with dielectric and semiconductor layers of the adopted GaN process, has been validated by means of experimental data and then used to define the EM simulator set-up for the spiral inductors. The proposed model adopts a simple π-topology with only seven lumped components and predicts inductor performance in terms of inductance, quality factor (Q-factor) and self-resonance frequency (SRF) for a large range of geometrical parameters of the spiral (i.e., number of turns, metal width, inner diameter).

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Design and analysis of spiral circular inductors for GaN based low noise amplifier (MMICs)

Cited by 3 publications

References 4 publications

High-Performance MMIC Inductors for GaN-on-Low-Resistivity Silicon for Microwave Applications

High-Performance MMIC Inductors for GaN-on-Low-Resistivity Silicon for Microwave Applications

Design and analysis of high performance air-bridge spiral circular inductors for GaN MMICs up to ku band

A Geometrically Scalable Lumped Model for Spiral Inductors in Radio Frequency GaN Technology on Silicon

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