Design and Analysis of Ultra Wideband GaN Dual-Gate HEMT Low-Noise Amplifiers

Shih, Shih-En; Deal, W.R.; Yamauchi, Daisuke; Sutton, W.; Luo, Wen; Chen, Yaochung; Smorchkova, I.; Heying, B.; Wójtowicz, M.; Siddiqui, M.

doi:10.1109/tmtt.2009.2034416

Cited by 41 publications

(4 citation statements)

References 13 publications

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“…The resistors (series with capacitors) served as a matched termination for unwanted signals and also a thick GaAs substrate was used to decease the capacitance and increase the resonance frequency [88]. Other HEMT works of the 2000s which succeeded to offer wider bandwidth, higher gain or better S 11 , inevitably consumed much more power (36-500 mW) are given in [89,106,152].…”

Section: Optimum Work Of the 2000smentioning

confidence: 99%

“…Most of the achievements in the 2000s were based on the CMOS [49, 50, 56, 57, 63-67, 69, 70, 72-74, 77, 82-84, 86, 87, 90-93, 95, 96, 98, 100, 101, 103-105, 107-117, 119-124, 127-131, 133-138, 140-142, 144, 145, 147-151], BiC-MOS [47, 55, 59, 60, 62, 78-81, 85, 118, 143], and HEMT [53,71,88,89,97,106,152] integrated circuits. Since the 1980s, usually but not always, HEMT has been employed for the frequencies higher than 10 GHz [21,24,27,32,36,37,39,71,89,106,152] and on the other hand, CMOS and BiCMOS are applied for frequencies lower than 10 GHz [35, 38, 41, 47, 49, 50, 55-57, 60, 63-67, 69, 72-74, 77, 80-84, 86, 87, 90-93, 95, 96, 98, 100, 101, 103-105, 107-124, 128-138, 140, 142-145, 148-151]. The available exceptions to the author are [3,53,59,88,97,127,141], and [147].…”

Section: In the 2000smentioning

confidence: 99%

“…F I G U R E 1 1 Circuit schematic of the threestage HEMT MMIC LNA [88] F I G U R E 1 2 Two-stage ultrawideband CMOS low-noise amplifier consisted of a common-gate in cascade with a cascode [104] Other HEMT works of the 2000s which succeeded to offer wider bandwidth, higher gain or better S 11 , inevitably consumed much more power (36-500 mW) are given in [89,106,152].…”

Section: Optimum Work Of the 2000smentioning

confidence: 99%

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Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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To the best of the author's knowledge, several studies during 1960-2019 were carried out on wideband and ultrawideband LNAs just to render optimum LNAs for SAW-less Radio-Frequency Integrated Circuits (RFICs) but none of these works reviewed and taught the proceedings of these six decades, hence the lack of a comprehensive review is quite noticeable. This article specifically studies the challenges and solutions of designing UWB LNA by reviewing topologies and techniques such as inductive peaking, noise and distortion cancellation, g m -boosting, active inductor and notch filter. Its historical aspect illustrates when the idea of wideband LNA was born and how it changed to ultrawideband LNA, and its tutorial aspect discusses circuits and achievements to present optimum LNAs in Complementary MOS (CMOS), BiCMOS and High-Electron-Mobility Transistor (HEMT) technologies. This work describes the endeavours of engineers in reaching UWB LNA from narrowband LNA during six decades that have great importance as a chapter in understanding this topic because it teaches all topologies, techniques, circuits and related events in a historical narrative for trained readers who are not experts on this topic. | UWB LNA | In the 1960sWhere did the idea of 'transistorised wideband LNA' originate from? It seems that everything goes back to the 1960s when This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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Section: Optimum Work Of the 2000smentioning

confidence: 99%

Section: In the 2000smentioning

confidence: 99%

Section: Optimum Work Of the 2000smentioning

confidence: 99%

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Ultrawideband LNA 1960–2019: Review

Shahrabadi

2021

IET Circuits, Devices & Syst

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“…With its large bandgap, high breakdown field, high peak and saturation carrier velocity, and good thermal conductiv-ity, AlGaN/GaN high electron mobility transistor (HEMT) devices have become the technology of choice for highpower microwave electronics [11]- [18]. Apart from being the technology of choice for next-generation high-power and high-frequency applications, they also show excellent noise characteristics for the design of LNA [19], [20].…”

Section: Introductionmentioning

confidence: 99%

Optimizing Low Noise Amplifiers: A Two-Stage Approach for Improved Noise Figure and Stability

Zaid,

Kumari,

Pampori

et al. 2024

IEEE Access

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This study introduces a new design for a low noise amplifier (LNA) consisting of two stages taking advantage of the inherent lossy properties of the input matching components. By doing this, the design achieves a balance between the minimum noise figure (NF) and stability, eliminating the complexities and challenges introduced by feedback networks. Furthermore, the integration of the low-pass filter (LPF) into the design as a noise-matching network ensures improved performance across both the amplifier stages. A comprehensive analytical study is also introduced to delve deep into the relationship between critical LNA parameters, such as stability and noise figures, and the internal resistance of input-matching inductors. Two C-band LNAs are compared in terms of stability using indigenous 0.25µm GaN technology. The designs are substantiated by fabricating two LNA MMICs for a 5-7 GHz frequency range, having a minimum NF of 1.3 dB and 1.5 dB, with a gain of 15 dB and 16 dB at 6 GHz, respectively. The study reveals that using the proposed approach, there is an overall improvement in NF of 0.2 dB within the frequency of operation. The work entails a way to remove the feedback network in the LNA leading to an improved NF.INDEX TERMS C-Band, GaN, low-noise amplifier (LNA), low pass filter (LPF), noise figure (NF)

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