Design and Application of a High Sensitivity Piezoresistive Pressure Sensor for Low Pressure Conditions

Yu, Huiyang; Huang, Jianqiu

doi:10.3390/s150922692

Cited by 39 publications

(13 citation statements)

References 15 publications

(13 reference statements)

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“…Each pressure test point of the forward travel ( U inc ) rises from 0 kPa to itself, and each pressure test point of the reverse travel ( U dec ) falls from 100 kPa to itself [ 5 ]. As we all known, the hysteresis and repeatability are related to the creep of the material itself and residual stresses in the package [ 39 ], here we take PS3/PS4 sensor as an example. The experiment results without compensation at 20 °C are listed in Table 3 .…”

Section: Experimental Section and Discussionmentioning

confidence: 99%

Design, Fabrication, and Implementation of an Array-Type MEMS Piezoresistive Intelligent Pressure Sensor System

Zhang

Chen

et al. 2018

Micromachines

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To meet the radiosonde requirement of high sensitivity and linearity, this study designs and implements a monolithically integrated array-type piezoresistive intelligent pressure sensor system which is made up of two groups of four pressure sensors with the pressure range of 0–50 kPa and 0–100 kPa respectively. First, theoretical models and ANSYS (version 14.5, Canonsburg, PA, USA) finite element method (FEM) are adopted to optimize the parameters of array sensor structure. Combing with FEM stress distribution results, the size and material characteristics of the array-type sensor are determined according to the analysis of the sensitivity and the ratio of signal to noise (SNR). Based on the optimized parameters, the manufacture and packaging of array-type sensor chips are then realized by using the standard complementary metal-oxide-semiconductor (CMOS) and microelectromechanical system (MEMS) process. Furthermore, an intelligent acquisition and processing system for pressure and temperature signals is achieved. The S3C2440A microprocessor (Samsung, Seoul, Korea) is regarded as the core part which can be applied to collect and process data. In particular, digital signal storage, display and transmission are realized by the application of a graphical user interface (GUI) written in QT/E. Besides, for the sake of compensating the temperature drift and nonlinear error, the data fusion technique is proposed based on a wavelet neural network improved by genetic algorithm (GA-WNN) for average measuring signal. The GA-WNN model is implemented in hardware by using a S3C2440A microprocessor. Finally, the results of calibration and test experiments achieved with the temperature ranges from −20 to 20 °C show that: (1) the nonlinear error and the sensitivity of the array-type pressure sensor are 8330 × 10−4 and 0.052 mV/V/kPa in the range of 0–50 kPa, respectively; (2) the nonlinear error and the sensitivity are 8129 × 10−4 and 0.020 mV/V/kPa in the range of 50–100 kPa, respectively; (3) the overall error of the intelligent pressure sensor system is maintained at ±0.252% within the hybrid composite range (0–100 kPa). The involved results indicate that the developed array-type composite pressure sensor has good performance, which can provide a useful reference for the development of multi-range MEMS piezoresistive pressure sensor.

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Section: Experimental Section and Discussionmentioning

confidence: 99%

Design, Fabrication, and Implementation of an Array-Type MEMS Piezoresistive Intelligent Pressure Sensor System

Zhang

Chen

et al. 2018

Micromachines

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“…et al [11], Zou, H. et al [12] and Meng, X. et al [13] improved the sensitivity and linearity by designing the island/beam structure on a flat diaphragm. Pramanik, C. et al [14] and Yu, H. et al [15] optimized the design of the flat pressure sensor by adjusting the doping concentration of piezoresistive material and the thickness of the diaphragm. In addition, for realizing the miniaturization, reducing the thickness of the sensor and protecting the device from fragmentation in the followed processes are the key steps.…”

Section: Of 10mentioning

confidence: 99%

A Novel Piezoresistive MEMS Pressure Sensors Based on Temporary Bonding Technology

Song

Zhang

et al. 2020

Sensors

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A miniature piezoresistive pressure sensor fabricated by temporary bonding technology was reported in this paper. The sensing membrane was formed on the device layer of an SOI (Silicon-On-Insulator) wafer, which was bonded to borosilicate glass (Borofloat 33, BF33) wafer for supporting before releasing with Cu-Cu bonding after boron doping and electrode patterning. The handle layer was bonded to another BF33 wafer after thinning and etching. Finally, the substrate BF33 wafer was thinned by chemical mechanical polishing (CMP) to reduce the total device thickness. The copper temporary bonding layer was removed by acid solution after dicing to release the sensing membrane. The chip area of the fabricated pressure sensor was of 1600 μm × 650 μm × 104 μm, and the size of a sensing membrane was of 100 μm × 100 μm × 2 μm. A higher sensitivity of 36 μV/(V∙kPa) in the range of 0–180 kPa was obtained. By further reducing the width, the fabricated miniature pressure sensor could be easily mounted in a medical catheter for the blood pressure measurement.

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“…The silicon piezoresistive pressure sensor adopts the advanced miniaturization manufacturing process to integrate the silicon pressure diaphragm as the sensing element, and takes advantage of the piezoresistive effect of polysilicon to prepare four polysilicon varistors by deposition on the insulating layer of silicon dioxide deposited on the pressure diaphragm to form the Wheatstone bridge [ 22 , 23 ]. A schematic diagram of the silicon piezoresistive pressure sensor is shown in Figure 1 , and the circuit of the Wheatstone bridge is shown in Figure 2 .…”

Section: Development Of Miniature Silicon Piezoresistive Sensormentioning

confidence: 99%

Application of Miniature FBG-MEMS Pressure Sensor in Penetration Process of Jacked Pile

2020

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In order to study the penetration mechanism of jacked piles in viscous soil foundation, the stress variation law of the pile–soil interface was obtained by installing silicon piezoresistive earth pressure and pore water pressure sensors, and fiber Bragg grating (FBG) sensors in a model pile body, and the penetration characteristics of jacked piles in homogeneous viscous soil were defined. The test results show that: Fiber Bragg grating and silicon piezoresistive sensing technology can better meet the requirements of testing the characteristics of jacked pile in viscous soil. The ratio of pile lateral resistance to pile end resistance varies when pile is jacked in homogeneous viscous soil. In the early stage of pile jacking, the ratio of pile lateral resistance is small, and in the later stage of pile jacking, the ratio of pile lateral resistance increases, but the ratio of pile end resistance is still higher than that of pile lateral resistance. The ratio of the effective stress to the total radial stress is high, and the variation law of the two is consistent with the depth. The total radial stress, pore water pressure, and effective radial stress all exhibit the degradation phenomenon, and the degradation degree decreases gradually with the increase in penetration depth at the same depth. The ratio of excess pore water pressure to overburden weight decreases with the increase in depth, and the maximum value is 87%. The research results can provide a reference for the engineering practice of jacked pile in viscous soil foundation.

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Design and Application of a High Sensitivity Piezoresistive Pressure Sensor for Low Pressure Conditions

Cited by 39 publications

References 15 publications

Design, Fabrication, and Implementation of an Array-Type MEMS Piezoresistive Intelligent Pressure Sensor System

Design, Fabrication, and Implementation of an Array-Type MEMS Piezoresistive Intelligent Pressure Sensor System

A Novel Piezoresistive MEMS Pressure Sensors Based on Temporary Bonding Technology

Application of Miniature FBG-MEMS Pressure Sensor in Penetration Process of Jacked Pile

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