Fast humidity sensors are reported that are based on CeO2 nanowires synthesized by a hydrothermal method. Both the response and recovery time are about 3 s, and are independent of the humidity. The sensitivity increases gradually as the humidity increases, and is up to 85 at 97% RH. The resistance decreases exponentially with increasing humidity, implying ion-type conductivity as the humidity sensing mechanism. A model based on the morphology and surface energy of the nanowires is given to explain these results further. Our experimental results indicate a pathway to improving the performance of humidity sensors.

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In this paper, a pressure sensor for low pressure detection (0.5 kPa–40 kPa) is proposed. In one structure (No. 1), the silicon membrane is partly etched to form a crossed beam on its top for stress concentration. An aluminum layer is also deposited as part of the beam. Four piezoresistors are fabricated. Two are located at the two ends of the beam. The other two are located at the membrane periphery. Four piezoresistors connect into a Wheatstone bridge. To demonstrate the stress concentrate effect of this structure, two other structures were designed and fabricated. One is a flat membrane structure (No. 2), the other is a structure with the aluminum beam, but without etched silicon (No. 3). The measurement results of these three structures show that the No.1 structure has the highest sensitivity, which is about 3.8 times that of the No. 2 structure and 2.7 times that of the No. 3 structure. They also show that the residual stress in the beam has some backside effect on the sensor performance.

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