2017
DOI: 10.3390/mi8100312
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Design and Fabrication of Capacitive Silicon Nanomechanical Resonators with Selective Vibration of a High-Order Mode

Abstract: This paper reports the design and fabrication of capacitive silicon nanomechanical resonators with the selective vibration of a high-order mode. Fixed-fixed beam capacitive silicon resonators have been successfully produced by the use of electron beam lithography, photolithography, deep reactive ion etching, and anodic bonding methods. All resonators with different vibration modes are designed to have the same resonant frequency for performance comparison. Measurement results show that higher-order mode capaci… Show more

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Cited by 7 publications
(3 citation statements)
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References 20 publications
(36 reference statements)
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“…Nanomechanical resonators keep an important role in a variety of applications such as high-sensitive sensors 5 , timing and frequency reference 67 , molecular mass detection 68 , and quantum information processing 69 owing to their advantages including the small size, high-frequency range, and low power consumption. Herein, the fabrication and evaluation of different nanomechanical resonators from a simple structure (a bridged nanobeam structure) to a complex structure (a vertical nanomechanical capacitive resonator) are investigated and demonstrated.…”
Section: Micro- and Nano-fluidsmentioning
confidence: 99%
“…Nanomechanical resonators keep an important role in a variety of applications such as high-sensitive sensors 5 , timing and frequency reference 67 , molecular mass detection 68 , and quantum information processing 69 owing to their advantages including the small size, high-frequency range, and low power consumption. Herein, the fabrication and evaluation of different nanomechanical resonators from a simple structure (a bridged nanobeam structure) to a complex structure (a vertical nanomechanical capacitive resonator) are investigated and demonstrated.…”
Section: Micro- and Nano-fluidsmentioning
confidence: 99%
“…The device layer is etched until reaching the oxide layer by controlling etching time of deep RIE process, as shown in Figure (f). Smooth and vertical etched shapes are achieved, as demonstrated in our recent works . Next, the 1 µm‐thick oxide layer of the SOI wafer was etched by BHF (buffered hydrofluoric acid) etching, and the structures are released.…”
Section: Experiments Sectionmentioning
confidence: 79%
“…Microbeam-based structures are widely applied in MEMS, such as microactuator/sensor [ 1 , 2 , 3 ], energy harvester [ 4 ], microresonator [ 5 , 6 , 7 ], gyroscope [ 8 ], microgripper [ 9 , 10 ] and so on. Their light weight, small size, low-energy consumption and durability make them even more attractive.…”
Section: Introductionmentioning
confidence: 99%